SMDJ11CA R7G

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Transient Voltage Suppression (TVS) diodes are among the most commonly used overvoltage protection devices in a wide range of electric/electronic circuits across different industries. These components are available in different shapes and sizes, ranging from surface-mount packages to large three-terminal assemblies. As their name suggests, TVS diodes are designed to protect circuits from destructive voltage spikes (transient overvoltage events), which can cause irreversible damages. SMDJ11CA R7G is a type of TVS diode device marketed by OnSemi Corporation, which provides fast, reliable and compact overvoltage protection for sensitive electronic circuits.

The SMDJ11CA R7G is a 14-pin SOD-323 package, designed to offer excellent overvoltage protection for sensitive electronic circuits. It features low capacitance and low leakage current, providing high peak pulse-current clamping and reversible energy absorbing capability. Furthermore, its compact surface-mount package improves the reliability, durability and board-level flexibility of the device. Other specs of the SMDJ11CA R7G include reverse stand-off voltage of 11 V, reverse clamping voltage of 13.7 V, maximum reverse leakage current of 100 nA and maximum peak pulse current of 1 A.

The SMDJ11CA R7G is suitable for use in a variety of applications, including military/aerospace/avionics, medical, communications, consumer electronics and industrial control equipment. It is particularly suitable for applications which require protection from lightning induced surges caused by nearby thunderstorms. It can be used in many forms, including power line, RF and high-speed data line protection. The device will trigger when the voltage spikes above the specified reverse stand-off voltage, and will then dissipate energy into its surrounding environment thereby protecting the circuit from being damaged.

The working principle of the SMDJ11CA R7G is based on the so-called avalanche breakdown effect. Under normal conditions, the voltage across a TVS diode is very small (typically a few hundred millivolts) and the current flow is limited by the device’s low leakage current. When an overvoltage transient is applied to the diode, its internal electric field increases and the junction becomes forward biased, which allows a large amount of current to flow through the device. This triggers an avalanche breakdown of electrons and ions in the junction, and the energy is dissipated in the form of heat.

The avalanche breakdown effect is a very efficient method of dissipating energy, and the SMDJ11CA R7G’s exceptionally low capacitance ensures fast response to transient events. This makes the device ideal for a variety of different applications where overvoltage protection is essential. Furthermore, the device’s effective power handling capabilities enable it to dissipate large amounts of energy without damaging the circuit. This makes it an excellent choice for high power applications, where overvoltage protection is especially important.

In conclusion, the SMDJ11CA R7G is an efficient and reliable TVS diode device suitable for a wide range of different applications. Its low capacitance, small package size and high peak pulse-current capability make it an excellent choice for overvoltage protection of sensitive electronic circuits. Furthermore, its efficient avalanche breakdown effect ensures it is capable of dissipating large amounts of energy without damaging the protected circuit. This makes the SMDJ11CA R7G an ideal choice for both high-power and RF & high-speed data line protection applications.

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