70T3319S166BFG8 Allicdata Electronics
Allicdata Part #:

70T3319S166BFG8-ND

Manufacturer Part#:

70T3319S166BFG8

Price: $ 64.85
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 208FPBGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 4.5Mb (256...
DataSheet: 70T3319S166BFG8 datasheet70T3319S166BFG8 Datasheet/PDF
Quantity: 1000
1000 +: $ 58.94760
Stock 1000Can Ship Immediately
$ 64.85
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT70T3319
Supplier Device Package: 208-FPBGA (15x15)
Package / Case: 208-LFBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.4 V ~ 2.6 V
Memory Interface: Parallel
Access Time: 3.6ns
Series: --
Clock Frequency: 166MHz
Memory Size: 4.5Mb (256K x 18)
Technology: SRAM - Dual Port, Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Memory is an essential component in the electronic systems of all kinds of devices. As an indispensable part of the electronic system, the application and working principle of 70T3319S166BFG8 is worth studying.

70T3319S166BFG8 is a type of static random-access memory, which is widely used in embedded electronic systems. It also serves as a "scratchpad" memory used in computers and other digital embedded systems.

The application field of 70T3319S166BFG8 includes embedded security systems, embedded navigation systems, computer systems, power line communication systems, industrial controllers and instrumentation systems. Owing to its versatility, the static RAM is used in applications that require fast access to data, with data) redundancy, and low power consumption.

The basic principle utilized by 70T3319S166BFG8 is the storage of charge in a cell to represent binary information. This type of static RAM uses capacitor cells to hold the binary information. Each cell can store one bit of digital information. The cells are composed of N-type material for "0" and P-type material for "1".

The capacitor cells are connected in series so that data can be written, stored and read from each memory cell. The reads and write operations are usually done on a word basis, meaning a read or write from one word at a time. The word size matters as some design of 70T3319S166BFG8 contains instructions for read and write for up to 16-bits.

In addition, the 70T3319S166BFG8 also offers three forms of operation, namely asynchronous operation, synchronous operation and burst operation. This provides customers with great flexibility in the use of SRAM. The asynchronous operation allows customers to write data in any order and to read data at any address. The synchronous operation is a read or write operation that is activated with a clock cycle. In the burst operation, the data is released or written sequentially.

In summary, the 70T3319S166BFG8 is an essential and versatile component in embedded electronic systems, in a wide range of application fields. It relies on capacitors for storing data, using a binary state of charge to represent 1 or 0. Furthermore, it offers three forms of operation, which provides greater flexibly for customers.

The specific data is subject to PDF, and the above content is for reference

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