Allicdata Part #: | 70T3319S166BFG8-ND |
Manufacturer Part#: |
70T3319S166BFG8 |
Price: | $ 64.85 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 4.5M PARALLEL 208FPBGA |
More Detail: | SRAM - Dual Port, Synchronous Memory IC 4.5Mb (256... |
DataSheet: | 70T3319S166BFG8 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 58.94760 |
Write Cycle Time - Word, Page: | -- |
Base Part Number: | IDT70T3319 |
Supplier Device Package: | 208-FPBGA (15x15) |
Package / Case: | 208-LFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 2.4 V ~ 2.6 V |
Memory Interface: | Parallel |
Access Time: | 3.6ns |
Series: | -- |
Clock Frequency: | 166MHz |
Memory Size: | 4.5Mb (256K x 18) |
Technology: | SRAM - Dual Port, Synchronous |
Memory Format: | SRAM |
Memory Type: | Volatile |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is an essential component in the electronic systems of all kinds of devices. As an indispensable part of the electronic system, the application and working principle of 70T3319S166BFG8 is worth studying.
70T3319S166BFG8 is a type of static random-access memory, which is widely used in embedded electronic systems. It also serves as a "scratchpad" memory used in computers and other digital embedded systems.
The application field of 70T3319S166BFG8 includes embedded security systems, embedded navigation systems, computer systems, power line communication systems, industrial controllers and instrumentation systems. Owing to its versatility, the static RAM is used in applications that require fast access to data, with data) redundancy, and low power consumption.
The basic principle utilized by 70T3319S166BFG8 is the storage of charge in a cell to represent binary information. This type of static RAM uses capacitor cells to hold the binary information. Each cell can store one bit of digital information. The cells are composed of N-type material for "0" and P-type material for "1".
The capacitor cells are connected in series so that data can be written, stored and read from each memory cell. The reads and write operations are usually done on a word basis, meaning a read or write from one word at a time. The word size matters as some design of 70T3319S166BFG8 contains instructions for read and write for up to 16-bits.
In addition, the 70T3319S166BFG8 also offers three forms of operation, namely asynchronous operation, synchronous operation and burst operation. This provides customers with great flexibility in the use of SRAM. The asynchronous operation allows customers to write data in any order and to read data at any address. The synchronous operation is a read or write operation that is activated with a clock cycle. In the burst operation, the data is released or written sequentially.
In summary, the 70T3319S166BFG8 is an essential and versatile component in embedded electronic systems, in a wide range of application fields. It relies on capacitors for storing data, using a binary state of charge to represent 1 or 0. Furthermore, it offers three forms of operation, which provides greater flexibly for customers.
The specific data is subject to PDF, and the above content is for reference
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