70T3719MS133BBG Allicdata Electronics
Allicdata Part #:

70T3719MS133BBG-ND

Manufacturer Part#:

70T3719MS133BBG

Price: $ 145.38
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 18M PARALLEL 324PBGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 18Mb (256K...
DataSheet: 70T3719MS133BBG datasheet70T3719MS133BBG Datasheet/PDF
Quantity: 1000
10 +: $ 132.15900
Stock 1000Can Ship Immediately
$ 145.38
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 18Mb (256K x 72)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Access Time: 4.2ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 324-BGA
Supplier Device Package: 324-PBGA (19x19)
Base Part Number: IDT70T3719M
Description

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Memory is an integral part of any electronic device and is used to store information. In particular, the 70T3719 MS133BBG application field and working principle is a specialized type of memory used in a range of applications. It can be used to store data as well as execute instructions.

The 70T3719MS133BBG application field is quite broad and includes a variety of applications in the fields of healthcare, aviation, automotive, industrial, and military. The memory is used primarily in embedded systems, where its performance can provide a superior alternative to the likes of SRAM and DRAM. It has been found to be particularly beneficial in aerial and automotive applications, due to its reliability and power efficiency.

In terms of its working principle, the 70T3719 MS133BBG application field is based on non-volatile memory technology. This type of memory is designed to retain its content even when power is turned off. To achieve this, non-volatile memory works by storing data on an array of capacitors, which capacitance decreases when charged. As a result, the capacitance can be used to store data in the form of digital bits.

The 70T3719 MS133BBG application field also makes use of the floating gate cell structure. This structure is made up of a pair of gate electrodes, one of which is a control gate and the other an Floating Gate (FG). When the control gate is charged, it acts as a switch in which electrons are then stored in the Floating Gate. This stored data is then auto-refreshed periodically, so that the data is not lost even when the power is turned off.

Apart from storing data, the 70T3719 MS133BBG application field also has the ability to execute instructions. It achieves this by making use of a flash controller, which contains a set of instructions that can be executed by the memory device. This allows for greater flexibility when it comes to programming and can provide a much more efficient solution for managing data.

In conclusion, the 70T3719 MS133BBG application field and working principle is a specialized type of memory used in a variety of applications. Its non-volatile memory technology and floating gate cell structure make it an ideal choice for embedded systems and it can provide a superior alternative to the likes of SRAM and DRAM. Moreover, it also has the ability to execute instructions, making it useful in applications where data must be managed efficiently.

The specific data is subject to PDF, and the above content is for reference

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