70T3519S133BFGI Allicdata Electronics
Allicdata Part #:

800-1380-ND

Manufacturer Part#:

70T3519S133BFGI

Price: $ 116.21
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 208FPBGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 9Mb (256K ...
DataSheet: 70T3519S133BFGI datasheet70T3519S133BFGI Datasheet/PDF
Quantity: 1000
14 +: $ 105.65000
Stock 1000Can Ship Immediately
$ 116.21
Specifications
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-FPBGA (15x15)
Base Part Number: IDT70T3519
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 9Mb (256K x 36)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Access Time: 4.2ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Introduction

The 70T3519S133BFGI is a type of Dynamic Random Access Memory, more commonly known as DRAM. In general, DRAM technology is used to provide interim, short-term memory that can be quickly accessed to provide rapid data handling in the form of memory chips. This specific model is the DDR3 SDRAM, manufactured by the Micron Technology, one of the most well-known tech companies in the industry.

Application Field and Working Principle

The 70T3519S133BFGI is mainly used in portable electronic devices and consumer electronic products. Its main application is its ability to provide high-speed data access and storage in a single chip. This makes it popular in many consumer products, particularly devices such as tablets, laptops, and smartphones. To support this usage, the 70T3519S133BFGI is compatible with the JEDEC DDR3L and LPDDR3 standards. The chip operates by utilizing a dual-gate transistor cell to store bits of data. It uses a differential input signal and a single output signal to communicate with the controller. Unlike other types of dynamic random access memory (DRAM), this Model operates on an 8-bit or 9-bit precharge cycle. This cycle allows for a fast transfer of memory data. To further support this, the chip uses automatic refresh cycles, which ensures that the data stored in the chip is not lost. Additionally, the chip‟s internal architecture is designed for optimal performance, allowing for efficient data access without sacrificing speed or reliability.

Structure

The 70T3519S133BFGI consists of eight internal banks, two 2-bit bus ports, and two 2-bit data ports. The two 2-bit bus ports provide the chip‟s byte wide path, while the two 2-bit data ports are used to connect the chip to external devices. This allows the chip to be used in a wide range of applications. The chip\'s internal banks consist of interconnections between various layers that are used to store data. Each layer consists of a number of cells, which allow for the storage of multiple bits of data. These cells are arranged in an 8x8x8 grid, resulting in a total of 512 cells per bank. The Dynamic Random Access Memory technology used by the chip allows for fast data transfer, making the chip ideal for applications that require quick data processing.

Security

In terms of security, the 70T3519S133BFGI also has certain advantages. It offers supplemental protection through its built-in error-checking, as well as data integrity features. The chip also features an encryption algorithm to ensure secure data transfer. Additionally, the chip comes with advanced features such as a built-in watchdog timer that protects against system lock-ups.

Conclusion

In conclusion, the 70T3519S133BFGI is an advanced DRAM chip that is ideal for use in a variety of applications, particularly those that require fast data access or storage. Its dual-gate transistor cell design allows for efficient data handling and its built-in error checking, encryption algorithm, and watchdog timer ensure the chip provides secure and reliable data access.

The specific data is subject to PDF, and the above content is for reference

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