AT49LV1025-90JC

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The AT49LV1025-90JC is a widely used non-volatile memory device in data storage and application fields. It is widely used in electronic devices, communication products, automotive information, photoelectric products, consumer products, medical products, aerospace and military defense applications. The AT49LV1025-90JC is manufactured by Atmel, a US-based manufacturer of semiconductor integrated circuits and was introduced in 1999.

The AT49LV1025-90JC is a fast static random access memory (S-RAM) with a maximum operating frequency of 90 MHz. It has a power supply voltage range of 4.5-5.5V and an endurance of 1 million write cycles. The memory capacity of the AT49LV1025-90JC is 32Mbits and the size of the individual cells are 8, 16, 32 and 64 bits. It is a single voltage device that can be configured for dual-voltage operation.

The primary functioning principle of the AT49LV1025-90JC is the Fowler-Nordheim tunnel effect. This type of tunneling phenomenon occurs when electrons tunnel through a thin insulator to reach neighboring, adjacent electrodes. This type of tunneling relies on the presence of an external electric field, which is applied across the insulator. The electrons in the AT49LV1025-90JC are stored in the thin insulator, which is called the tunnel oxide.

The AT49LV1025-90JC also features an embedded write algorithm which helps the memory device to withstand harsh environmental conditions. This algorithm ensures that the data stored in the AT49LV1025-90JC is retained even when the device is exposed to temperatures up to 130 °C.

The AT49LV1025-90JC is designed to withstand exposure to ionizing radiation, which can be damaging to other memory devices. It utilizes a combination of self-adjusting circuitry and radiation shielding to minimize damage from radiation and ensure reliable data retention.

In summary, the AT49LV1025-90JC is a reliable non-volatile memory device that can operate at high speeds and withstand exposure to harsh environmental conditions. It is widely used in many electronic applications, from consumer products to aerospace and military defense applications. Its main functioning principle is the Fowler-Nordheim tunnel effect and it also features an embedded write algorithm to protect against radiation damage.

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