Allicdata Part #: | 7143LA90J-ND |
Manufacturer Part#: |
7143LA90J |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 32K PARALLEL 68PLCC |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 32Kb (2K ... |
DataSheet: | 7143LA90J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 32Kb (2K x 16) |
Write Cycle Time - Word, Page: | 90ns |
Access Time: | 90ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 68-LCC (J-Lead) |
Supplier Device Package: | 68-PLCC (24.21x24.21) |
Base Part Number: | IDT7143 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 7143LA90J is a memory component that provides a reliable and efficient implementation of non-volatile storage for varied applications. This component provides the necessary, low-level access control to the volatile memory which is used by different devices. It also offers a wide range of memory protection features that help to safeguard data while in storage. Overall, it is an important component in the data storage industry.
The 7143LA90J is primarily used as a component of the industrial embedded systems. It provides a reliable, low-power solution for securely handling volatile memory. This component can be used as a building block in creating large, complex embedded systems. It can be used to store data and configuration information for embedded devices, to provide access control, and to manage sensitive memory operations.
The 7143LA90J adopts the two-stage write-erase cycle technique and it also has an on-chip counter to ensure correct memory operation. This component employs the write-erase cycle technique to manage the low-level access control to the volatile memory. The cycles of the write-erase cycle technique vary based on the specific application, but the write-erase cycle typically consists of three stages: write, erase and protect. During the write stage, the data is written to the memory bank and then it is erased during the erase stage. Finally, the data is protected during the protect stage. This two-stage write-erase cycle technique offers a reliable and secure solution for memory management.
In addition, the 7143LA90J incorporates numerous memory protection features to ensure that the data stored within the memory is safe from accidental loss or corruption. These features include error checking and correction protocols, on-chip non-volatile memory, random write-protect mechanisms, data protection on power-down, and secure easyfirmware programming. These features provide a highly secure solution for handling volatile memory, ensuring that the data stored within is accuracy and securely available when needed.
This 7143LA90J not only offers a reliable and secure solution for handling volatile memory, but it also offers a wide range of features to further enhance the data protection integrity. The component is available in several different versions to meet a variety of application requirements. It can be used with a variety of different processor architectures, making it an ideal solution for embedded applications. Furthermore, the component is designed to be highly efficient and cost-effective, making it an ideal solution for memory management operations.
Overall, the 7143LA90J is a reliable, secure and efficient solution for handling volatile memory for a variety of applications. Its two-stage write-erase cycle technique and numerous memory protection features ensure that the data is stored securely and accurately. Furthermore, its compatibility with different processor architectures and cost-efficiency make it an ideal solution for embedded applications.
The specific data is subject to PDF, and the above content is for reference
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