7143LA90GB Allicdata Electronics
Allicdata Part #:

7143LA90GB-ND

Manufacturer Part#:

7143LA90GB

Price: $ 94.34
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 32K PARALLEL 68PGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 32Kb (2K ...
DataSheet: 7143LA90GB datasheet7143LA90GB Datasheet/PDF
Quantity: 1000
21 +: $ 85.76470
Stock 1000Can Ship Immediately
$ 94.34
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (2K x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 68-BPGA
Supplier Device Package: 68-PGA (29.46x29.46)
Description

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7143LA90GB is currently available as a main memory technology in the market, which is applied by many server and personal computer manufacturers. This article will briefly explain the application fields and the working principle of 7143LA90GB.

Application Fields

7143LA90GB is mainly used as the main memory for server and personal computers. Because of its high density, low power consumption, substantial random access memory speed and non-volatility, 7143LA90GB memory is increasingly adopted as a reliable storage device by server and personal computer builders.

Besides the common application in server and personal computers, 7143LA90GB also plays a key role for embedded system design in some areas. High reliability, low power consumption and excellent non-volatility make 7143LA90GB memory applicable in various embedded systems with tight restrictions on power, size and cost.

The automotive industry is also an important market for 7143LA90GB, as the memory is embedded in many car accessories to store calibration, operating and diagnostic information.

Working Principle

7143LA90GB memory is based on the architecture of NAND flash memory. The core component of the memory cell contains a single polysilicon gate floating-gate transistor. The transistor works on the principle of storing and releasing electrons, following electric potentials, to store information. Unlike the RAM memory cells, a single cell can store one bit of information.

The 7143LA90GB memory gets power from two sources. The first is an external voltage source, which provides power to the control logic, to read, write and erase the memory. The second is an internal power source, which is used to store data.

Since the NAND flash architecture has a floating gate structure, it can store electrons in its interior for a long period of time. Thus, the memory is not volatile even when the external voltage source is removed.

Conclusion

7143LA90GB memory is widely adopted in the market, mainly due to its high density, low power consumption, excellent random access speed and non-volatility. It can be used as a main memory for server and personal computers, as well as an embedded memory for car accessories, or other embedded systems. The working principle of 7143LA90GB is based on NAND flash memory, and it is powered by both external and internal voltage sources.

The specific data is subject to PDF, and the above content is for reference

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