Allicdata Part #: | 7143LA25PFI8-ND |
Manufacturer Part#: |
7143LA25PFI8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 32K PARALLEL 100TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 32Kb (2K ... |
DataSheet: | 7143LA25PFI8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 32Kb (2K x 16) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x14) |
Base Part Number: | IDT7143 |
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Memory
The application field and working principle of 7143LA25PFI8 is an essential topic in discourse surrounding memory and data storage technology. As computer systems continue to become more powerful, faster, and transfer data more efficiently, the demand for larger, more reliable memory and data storage products is constantly increasing. 7143LA25PFI8 is a type of magnetic random access memory technology, also known as MRAM, that offers superior data storage and retrieval capabilities compared to traditional DRAM and SRAM models.
Application Field of 7143LA25PFI8
7143LA25PFI8 is a type of MRAM that is designed to provide superior write and read capabilities. It is well-suited for use in compute-intensive applications, including big data analytics, artificial intelligence, and machine learning. 7143LA25PFI8 is also used in data storage products such as hard drives, flash memory cards, and SSDs. These products are used in a wide array of applications, including computing and communications in commercial, industrial, and scientific settings.
Working Principle of 7143LA25PFI8
MRAM works by utilizing a magnetic tunnel junction (MTJ) device to store data. It is comprised of two ferromagnetic layers that have a tunnel barrier between them. When a certain voltage is applied to the MTJ, the magnetic polarization of one of the ferromagnetic layers will change due to a process known as spin-transfer torque. This change in polarization is used to store data in a binary format. When the voltage is removed, the stored data will remain stored until it is overwritten with new data.
Unlike traditional DRAM and SRAM models, 7143LA25PFI8 has the advantage of being non-volatile, which means the stored data will never be lost due to a power outage. In addition, 7143LA25PFI8 is also resistant to radiation and is able to maintain its stored data in a wide range of temperatures and conditions. This makes 7143LA25PFI8 an ideal choice for use in embedded applications as well as in critical embedded networked systems such as aircraft systems, space exploration control systems, and industrial control systems.
Conclusion
7143LA25PFI8 is a type of MRAM that offers superior data storage and retrieval capabilities compared to traditional DRAM and SRAM models. Its non-volatility, radiation resistance, and wide range of temperature tolerance make it an ideal choice for use in applications that require reliable data storage and retrieval. 7143LA25PFI8 is most commonly used in compute-intensive applications, such as big data analytics, artificial intelligence, and machine learning, as well as in data storage products such as hard drives, flash memory cards, and SSDs.
The specific data is subject to PDF, and the above content is for reference
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