70T3339S200BCG Allicdata Electronics
Allicdata Part #:

70T3339S200BCG-ND

Manufacturer Part#:

70T3339S200BCG

Price: $ 107.18
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 9Mb (512K ...
DataSheet: 70T3339S200BCG datasheet70T3339S200BCG Datasheet/PDF
Quantity: 1000
12 +: $ 97.43230
Stock 1000Can Ship Immediately
$ 107.18
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT70T3339
Supplier Device Package: 256-CABGA (17x17)
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.4 V ~ 2.6 V
Memory Interface: Parallel
Access Time: 3.4ns
Series: --
Clock Frequency: 200MHz
Memory Size: 9Mb (512K x 18)
Technology: SRAM - Dual Port, Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an essential component for computing devices, hence it is no wonder that important advancements have been achieved in recent years. 70T3339S200BCG is a type of advanced memory version that offers a great capacity in terms of both data storage and data processing speed. This allows for more efficient operations for both personal and professional computer devices.

70T3339S200BCG is an advanced fourth-generation, ultra-fast 3D-stacked DRAM which incorporates the use of Through Silicon Vias (TSVs) technology. This kind of technological advancement facilitates increased capacity and speed, which is a necessity when dealing with high-speed data transfer and storing.

This type of Memory chip provides support for both DDR3 DRAM and DDR4 DRAM applications. DDR3 DRAM offers a higher memory transfer rate, allowing for faster reading and writing to and from the computer. DDR4 DRAM offers an even higher rate data transfer with up to 3.2 gigabytes per second.

When using 70T3339S200BCG for high-speed data transfer, data can be transferred directly from the RAM memory to the CPU, increasing the speed of the device. This is advantageous for applications that require quick processing of large amounts of data. Applications such as 3D graphics, multimedia coding, image rendering, and gaming are the perfect fit for this type of memory.

70T3339S200BCG also includes a built in error correction mechanism. Any errors that may occur during data transfer are identified and corrected as quickly as possible, allowing for more reliable operations. Additionally, this memory chip supports extensive thermal management, allowing for better temperature control and longer driver life.

The working principle of 70T3339S200BCG is based on a two-part approach. The first part is the transmission of data from the memory chip to the CPU, the second part is the storage of data in the DRAM. During the first part, data is transmitted in the form of a packet to the DIMM interface. From there, it is sent to the CPU for processing. Once the data is processed, it is written back to the memory. During the second part, data is stored in a 3D-stacked design, allowing for higher density and speed.

The 70T3339S200BCG memory chip offers exceptional performance, making it an ideal choice for applications that require high speed and large data processing capacity. It is extremely reliable and it includes a built in mechanism for detecting and correcting errors. Furthermore, this DRAM has excellent thermal management features which allow it to operate at a much lower temperature than other memory chips.

The specific data is subject to PDF, and the above content is for reference

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