1N5364AE3/TR12 Allicdata Electronics
Allicdata Part #:

1N5364AE3/TR12-ND

Manufacturer Part#:

1N5364AE3/TR12

Price: $ 1.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 33V 5W T18
More Detail: Zener Diode 33V 5W ±10% Through Hole T-18
DataSheet: 1N5364AE3/TR12 datasheet1N5364AE3/TR12 Datasheet/PDF
Quantity: 1000
3000 +: $ 1.22598
Stock 1000Can Ship Immediately
$ 1.37
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±10%
Power - Max: 5W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 23.8V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: T-18
Base Part Number: 1N5364
Description

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Diodes - Zener - Single

The 1N5364AE3/TR12 is a single-valued Zener diode, which belongs to the category of special purpose diodes. This type is specially designed for use in with low current general purpose applications and has a wide range of features that make it an excellent choice for electronic circuits.

Application Field

The 1N5364AE3/TR12 is suitable for a variety of applications, such as power rectification, battery management, voltage regulation and temperature compensation. The Zener breakdown voltage of the diode is between 9V and 15V, and it has a power consumption of 0.5W. It also offers excellent temperature stability and reverse power dissipation, making it ideal for low current general purpose applications where temperature stability is critical.

Working Principle

The core principle behind the 1N5364AE3/TR12 is its Zener breakdown voltage. The Zener breakdown voltage is the point at which the current flow through a Zener diode exceeds its specified maximum value. This causes the diode to collapse and limits the current flow to only a certain amount. This is a beneficial property of Zener diodes, as it can be used to precisely regulate and control the voltage in a circuit.

The 1N5364AE3/TR12 is designed to work in a specific voltage range, and its breakdown voltage is set to the specified value through a special purification process. The Zener breakdown voltage of the device is determined by the doping concentration of its base material, and its ability to maintain a precise voltage is further improved through the use of special annealing techniques and a resistance-temperature (RT) compensation process. This allows the diode to remain stable over a wide range of temperatures and resistances.

In addition to the Zener breakdown voltage, the 1N5364AE3/TR12 also has a power limit. This power limit defines the maximum amount of power the device is capable of dissipating in a given circuit. This ensures the device does not become overloaded and avoids any damage to the circuit or the diode itself.

Conclusion

The 1N5364AE3/TR12 is a single-valued Zener diode that is specially designed for use in low current general purpose applications. It has a wide range of features that make it an excellent choice for electronics circuits, including a Zener breakdown voltage between 9V and 15V, and a power limit of 0.5W. Its temperature stability and RT compensation process make it an ideal choice for use in precision control and regulation.

The specific data is subject to PDF, and the above content is for reference

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