1N5360BG Allicdata Electronics
Allicdata Part #:

1N5360BGOS-ND

Manufacturer Part#:

1N5360BG

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 25V 5W AXIAL
More Detail: Zener Diode 25V 5W ±5% Through Hole Axial
DataSheet: 1N5360BG datasheet1N5360BG Datasheet/PDF
Quantity: 2314
1 +: $ 0.31500
10 +: $ 0.25641
100 +: $ 0.17464
500 +: $ 0.13098
1000 +: $ 0.09824
Stock 2314Can Ship Immediately
$ 0.35
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 25V
Tolerance: ±5%
Power - Max: 5W
Impedance (Max) (Zzt): 4 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 19V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: Axial
Base Part Number: 1N5360
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 1N5360BG diode is a device that is suited for a number of applications and is considered one of the most popular Zener diode types. It is usually used in voltage regulation circuits and as a switch, and works by allowing electric current to flow through it one way, while blocking current the opposite way. This is achieved through the physical properties of semiconductor materials.

The main body of the 1N5360BG is made of either a glass vacuum-sealed or metal-sleeve package, and it is typically round in shape. It has a band marked on it to indicate the cathode (negative) side. Inside the diode, N-type and P-type semiconductor materials are layered on top of each other. The N-type is the middle layer and has a surplus of electrons, and the P-type has a lack of electrons or what some refer to as "holes". This creates a P-N junction between the two materials. The junction is a depletion region where electric current from one side of the diode cannot transfer to the other side.

The N-type material of the 1N5360BG is made from a highly doped silicon, usually with a doping of 1017 cm-3, which is much higher than the N-type material used for ordinary diodes like the 1N4148 or 1N4002. The doping is measured in cms with values increasing as doses of doping material are added. With the doping level used in the 1N5360BG, it is capable of handling more power and operating at much higher temperatures than ordinary diodes.

The P-type material is also doped but with a much lesser extent than the N-type material. The material used in the P-type semiconductor of the 1N5360BG holds enough potential to create a voltage drop across the junction when voltage is applied. The Zener voltage of this diode is 6 volts and it usually maintains a voltage regulation of between 5.5 and 6.5 volts. This means that if there is any increase in voltages that is higher than the Zener voltage, the P-type material will only allow 6 volts to pass through.

In an application field, 1N5360BG diodes are mostly used in voltage regulation circuits where it breaks up an electrical circuit and creates a break, regulating the voltages in the circuit. The diode is also used to protect circuits from reverse polarity or from passing voltages that are higher than the specified Zener voltage. A 1N5360BG diode is also used as a switch and can be used to route signals between circuits, allowing signals to flow while blocking signals the opposite way.

The 1N5360BG is a versatile and reliable diode that is suitable for a wide range of applications. It has a low leakage current, a low capacitance and a low forward voltage drop. The 1N5360BG is also compatible with different types of circuits, allowing it to be used in both digital and analog circuits. With its reliable performance and versatility, the 1N5360BG is one of the most popular Zener diodes currently available in the market.

The specific data is subject to PDF, and the above content is for reference

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