1N6081 Discrete Semiconductor Products |
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Allicdata Part #: | 1N6081S-ND |
Manufacturer Part#: |
1N6081 |
Price: | $ 6.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Semtech Corporation |
Short Description: | DIODE GEN PURP 150V 5A AXIAL |
More Detail: | Diode Standard 150V 5A Through Hole Axial |
DataSheet: | 1N6081 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 5.77259 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 970mV @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 150V |
Capacitance @ Vr, F: | 230pF @ 5V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -65°C ~ 150°C |
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The 1N6081 is a silicon rectifier diode. Rectifier diodes are used in a variety of applications, such as power supplies, DC motor control, and communications. The 1N6081 is an especially robust form of rectifier diode, containing a low forward voltage drop and high surge current. Its general application field is audio, telecommunications and consumer electronics.
A rectifier diode has a single-direction conduction current, allowing it to pass current in one direction easily and prohibit it in the other; in other words, it serves as an electrical switch to control the direction of current flow. The current flows in the ‘forward’ direction, and when it is reversed, the diode does not allow current. This creates a rectified wave which in turn creates a DC voltage. The diode takes the alternating current (AC) input of the system and creates a direct current (DC) output. The 1N6081 functions like a controlled current generator at each cycle, blocking some of the peaks in order to produce a steady and unchanging current.
The 1N6081 is made from a semiconductor material, such as silicon, and functions according to the PN junction diode principle (also known as the “diode rectifying effect”). A PN junction diode is formed when a doped P-type semiconductor material is placed next to a doped N-type semiconductor material. This creates a barrier that only allows current to flow in one direction, as the electrons will travel from the N-type material to the P-type material. The 1N6081 is able to withstand large amounts of current owing to its robust construction and PN junction arrangement.
The 1N6081 has low forward voltage drop and high surge current, rendering it especially suitable for use in consumer electronics applications, such as computers and mobile phones. The low forward voltage drop helps to significantly reduce power losses, while the high surge current endows it with the capability of carrying more current within a short period of time. In addition, its small size combined with a relatively low forward voltage make it ideal for uses where components need to be kept to a minimum size.
The 1N6081 rectifier diode has a wide range of applications, and is particularly suited for use in consumer electronics, telecommunications and audio applications. Its low forward voltage drop and high surge current capabilities make it an attractive choice for those looking for a small, powerful rectifier diode.
The specific data is subject to PDF, and the above content is for reference
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