RN2964(TE85L,F) Datasheet(PDF) - Toshiba Semiconductor and Storage

Part No. RN2964(TE85L,F)
Description TRANS 2PNP PREBIAS 0.1W US6
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount US6
Manufacturer Part Toshiba Semiconductor and Storage


Part Number Components Description Manufacturer
#252MXPR-2535A FILTER HELICAL 405MHZ TYPE 7HW
#292KNAS-T1028Z INDUCTOR ADJUST 100NH THRU HOLE
100nH Adjustable Inductor 35 @ 50MHz Radial
#5HT-36020AS-360 FILTER HELICAL 360MHZ TYPE 5HT
#A915AY-100M=P3 FIXED IND 10UH 1.49A 90 MOHM SMD
10µH Shielded Wirewound Inductor 1.49A 90 mOhm Max Nonstandard
#A916CY-3R3M=P3 FIXED IND 3.3UH 3.52A 26 MOHM
3.3µH Shielded Inductor 3.52A 26 mOhm Max Nonstandard
#B952AS-H-101M=P3 FIXED IND
100µH Shielded Wirewound Inductor 900mA 380 mOhm Max Nonstandard
#B952AS-H-120M=P3 FIXED IND
12µH Shielded Wirewound Inductor 2.5A 51 mOhm Max Nonstandard
#B952AS-H-150M=P3 FIXED IND
15µH Shielded Wirewound Inductor 2.3A 62 mOhm Max Nonstandard
#B952AS-H-180M=P3 FIXED IND
18µH Shielded Wirewound Inductor 2A 79 mOhm Max Nonstandard
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