| Allicdata Part #: | LN100LA-G-ND |
| Manufacturer Part#: |
LN100LA-G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microchip Technology |
| Short Description: | MOSFET 2N-CH 1200V |
| More Detail: | Mosfet Array 2 N-Channel (Cascoded) 1200V (1.2kV) ... |
| DataSheet: |  LN100LA-G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | 2 N-Channel (Cascoded) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C: | -- |
| Rds On (Max) @ Id, Vgs: | 3000 Ohm @ 2mA, 2.8V |
| Vgs(th) (Max) @ Id: | 1.6V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
| Power - Max: | 350mW |
| Operating Temperature: | -25°C ~ 125°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-VFLGA |
| Supplier Device Package: | 6-LFGA (3x3) |
Description
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The LN100LA-G is a classic MOSFET arrangement, featuring an array of four insulated-gate field-effect transistors (IGFETs). IGFETs are voltage-controlled semiconductor devices, typically offering high input impedance and efficiency compared to other types of transistor. This particular arrangement is usually used as a power amplifier, providing an efficient and cost-effective solution for devices with high power requirements.
The heart of the LN100LA-G is an array of four IGFETs connected in a series configuration. This arrangement provides a number of benefits, such as improved output impedance and higher power efficiency, as well as a greater current capacity. The arrangement of the IGFETs in the array ensures that the device has a higher gain than usual, allowing for a higher output power.
The LN100LA-G is most commonly used as a power amplifier when there is a need to power a device with a high power requirement. It is a particularly effective choice for powering speakers or audio systems, offering up to 100 watts of output power. The LN100LA-G can also be used to power computers, as well as industrial systems, such as pumps and cooling systems.
The LN100LA-G works through the use of an input voltage, which is passed through the array of IGFETs. This voltage is converted into an output current, which is then passed through the device\'s output terminals. By adjusting the voltage that is used to drive the device, the output current and power can be controlled accordingly. In addition to controlling the output power, the LN100LA-G can also be used to control the input voltage, allowing for more precise voltage control.
Overall, the LN100LA-G is a highly efficient and cost-effective solution for powering devices with high power requirements. It offers a range of benefits, such as high power efficiency and output impedance, as well as the ability to precisely control input and output voltages. All this makes the LN100LA-G an ideal choice for powering a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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