SI4973DY-T1-GE3

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The SI4973DY-T1-GE3 is a monolithic dual N-channel enhancement mode power MOSFET array with integrated high side and low side switches. This device is a great solution for applications that require high-efficient, fast-switching, high-current solutions. This device can be used in various applications, including motor drives, programmable power supplies, and power management.

The SI4973DY-T1-GE3 is constructed from two N-channel power MOSFETs, with both high- and low-side switches integrated. This means that the device is both high-side and low-side switch integrated, providing the flexibility for a wide variety of applications. The device is rated for a blocking voltage of 12 V, allowing for use in a wide range of applications.

The working principle of the device is that the low-side switch is connected directly to the ground and the high-side switch is connected to the supply voltage. When the device is enabled, the high-side switch will be held on and current will flow between the source and drain of the device. The low-side switch will be held off, breaking the connection between the source and drain. Thus, the device provides fast and efficient power switching.

The SI4973DY-T1-GE3 is designed to be used in various applications. It is ideal for use in motor drives, programmable power supplies, and power management applications. It is also suitable for use in high power audio systems, power distribution environments, and industrial control systems. The device can also be used in applications where a high-precision, fast-switching, and high-current power MOSFET array is required.

The SI4973DY-T1-GE3 is a great solution for power switching applications that require high-efficiency, fast switching, and high-current solutions. This device is ideal for use in a wide range of applications, from motor drives to programmable power supplies and power management.

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