NTMD6601NR2G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTMD6601NR2G is a lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) that could be used for various applications. In a MOSFET, current passes through the channel between the source and the drain as a result of the application of an electric field on the gate terminal. This type of device is used as a switch to control the flow of current or voltage in an electronic circuit. The NTMD6601NR2G is a power MOSFET array and it is designed for applications such as switching, amplification, protection and regulating.

The working principle of the NTMD6601NR2G is straightforward. An applied voltage at the gate terminal changes the electrostatic force in the electric field, allowing more or less electrons to flow between the source and the drain. This intense electric field, in other words, modulates the flow of electrons in the channel, enabling it to be used as a switch. The device can also be configured to act like an amplifier, with the drain-source voltage amplifying the gate voltage.

This MOSFET array is capable of a wide range of functions, making it suitable for multiple applications. It can be used for controlling motor speed and direction, audio amplification, motor start circuits, lighting control and many more applications. It can also be used in automotive electronics, such as controlling the power output of an alternator or starter motor. In other applications, such as RF amplification, the MOSFET array can be used as a switch, amplifier or mixer.

The NTMD6601NR2G is a flexible device and its features include low on-resistance and a high input capacitance. The array is also fast and efficient, with a high transconductance and very low input capacitance. This makes it suitable for applications requiring high-speed control, such as digital circuitry. The device is also tolerant of high temperature and is able to operate in temperatures up to 175°C. Additionally, it has a self-protection feature that can help protect the device and the circuit from damage due to excessive voltage or power.

The NTMD6601NR2G LDMOSFET array is a versatile device that is perfect for a wide range of applications. Its broad range of features and its ability to operate in high temperatures make it a perfect choice for applications where switching, regulating, protection and amplification are needed.

The specific data is subject to PDF, and the above content is for reference