LN60A01ES-LF Allicdata Electronics
Allicdata Part #:

LN60A01ES-LF-ND

Manufacturer Part#:

LN60A01ES-LF

Price: $ 0.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Monolithic Power Systems Inc.
Short Description: MOSFET 3N-CH 600V 0.08A 8SOIC
More Detail: Mosfet Array 3 N-Channel, Common Gate 600V 80mA 1....
DataSheet: LN60A01ES-LF datasheetLN60A01ES-LF Datasheet/PDF
Quantity: 1000
100 +: $ 0.68336
Stock 1000Can Ship Immediately
$ 0.75
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: 3 N-Channel, Common Gate
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: 190 Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 1.3W
Operating Temperature: -20°C ~ 125°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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The LN60A01ES-LF is a high-performance array of field-effect transistors (FETs) or Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). This type of transistor is one of the most important components of an integrated circuit. It is also one of the most commonly used devices for controlling large currents and switching between high and low voltage levels.

This array, composed of 9 FETs and 4 MOSFETs, is designed to be able to handle a wide variety of electrical and mechanical needs. The array is designed to provide a robust solution to meet the most stringent performance requirements in a wide variety of applications. Furthermore, it is designed to be able to be integrated into other electronic components, such as analog-to-digital converters.

This particular device is designed to be used as an effective power switch, allowing power up and down with a minimum on-resistance and a high off-state current rating. In addition, this device contains several protective features, such as thermal and overvoltage protection, which make it suitable for applications in the automotive, medical and industrial sectors. The device also features a wide input voltage range and output current level, making it suitable for use in switching applications.

The underlying working principles of this array include one of the most important ideas in electronics: currents that flow through the channels of the devices. Basically, a well-designed FET array is able to conduct or block current conduction in the vertical channel, from the channel to the source or in the horizontal channel, from the channel to the drain. This vertical and horizontal current flow can be used to control voltages, currents, signals and power in the circuit.

A FET array can also be used to design electronic circuits to carry out various functions. This is usually done by connecting different FETs together in a network and depending on their configuration, power signals for other components of the circuit can be switched in different ways. Furthermore, this type of device is also used to build stable and reliable nodes in a circuit, which can then be used as reference points for controlling other components in the circuit.

Due to its wide feature set, the LN60A01ES-LF is an ideal solution for a variety of applications, ranging from automotive systems, to motor control and switching, to power switching and control. Its high level of protection and wide range of voltage and current makes it a reliable and robust solution for applications that require high performance. In addition, its ability to be neatly integrated into other electronic components makes the LN60A01ES-LF a desirable solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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