Allicdata Part #: | 0402ZK180FBSTR-ND |
Manufacturer Part#: |
0402ZK180FBSTR |
Price: | $ 0.14 |
Product Category: | Capacitors |
Manufacturer: | AVX Corporation |
Short Description: | CAP THIN FILM 18PF 10V 0402 |
More Detail: | 18pF Thin Film Capacitor 10V 0402 (1005 Metric) |
DataSheet: | 0402ZK180FBSTR Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
5000 +: | $ 0.12251 |
Specifications
Series: | Accu-P® |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Capacitance: | 18pF |
Tolerance: | ±1% |
Voltage - Rated: | 10V |
Mounting Type: | Surface Mount |
Package / Case: | 0402 (1005 Metric) |
Operating Temperature: | -55°C ~ 125°C |
Features: | RF, High Q, Low Loss |
Size / Dimension: | 0.039" L x 0.022" W (1.00mm x 0.55mm) |
Height - Seated (Max): | 0.020" (0.50mm) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Thin Film Capacitors Thin film capacitors are widely used in aerospace, medical, and high-end consumer products due to their high performance, relative small size and low cost compared to bulk capacitors. Thin Film Capacitors, like 0402ZK180FBSTR, use various physical properties to store and release electrostatic charge.The 0402ZK180FBSTR is a type of thin film capacitor specifically designed for increased performance in hostile electrical environments. This capacitor offers high electrical stability, low inductance, and a low impedance over a wide range of frequencies. It is small, lightweight and can withstand high temperatures, which makes it ideal for a range of high-demand applications.The 0402ZK180FBSTR utilizes two techniques to store electrostatic charge. The first technique, MIM-metal insulator metal, involves the use of conductive metal layers separated by a dielectric material. This dielectric material stores electrical charges by leveraging its electrical insulating properties.The second technique, metal-oxide-semiconductor (MOS), utilizes metal-oxide materials as the dielectric. This material stores charge in the form of ionic bonds between the metal and the oxide molecules. Unlike MIM, MOS capacitors can store more charge in a given space.In addition, the 0402ZK180FBSTR utilizes an increased surface area to increase its capacitance. Though it is built as a monolithic component, the individual capacitors are built with dielectric layers that create increased surface area. This increased surface area increases the capacitance of the component and its ability to store electrostatic charge.The 0402ZK180FBSTR is ideal for applications in harsh environmental conditions due to its high voltage stability and its ability to withstand wide temperature swings. It is used in a range of applications, such as noise suppression, power management, and even RFID systems.Despite its small size, the 0402ZK180FBSTR is surprisingly robust. It is built with layered components, allowing it to resist shock and vibration while providing excellent electron charge storage capabilities.It is important to note that the 0402ZK180FBSTR will not tolerate reverse-voltage conditions and can only be used in the recommended conditions. It is also important to properly connect the capacitor and ensure it is properly grounded. Improper connection can lead to reduced capacitance, increased inductance, and even failure of the component.In conclusion, the 0402ZK180FBSTR is a type of thin film capacitor designed for improved performance and reliability in harsh environmental conditions. It features MIM and MOS technologies for storing electrostatic charges and increased surface area for improved capacitance. It is used in a range of applications, such as power management, RFID, and noise suppression. However, proper grounding and connection is required for the component to remain safe and effective.The specific data is subject to PDF, and the above content is for reference
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