Allicdata Part #: | 0667434898-ND |
Manufacturer Part#: |
0667434898 |
Price: | $ 0.00 |
Product Category: | Uncategorized |
Manufacturer: | Molex, LLC |
Short Description: | HIPOT GUARDS KIT 2 |
More Detail: | N/A |
DataSheet: | 0667434898 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Active |
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0667434898 is a field effect transistor (FET). It is a three-terminal electronic device that can control the flow of current between two or more electrical nodes. It is a versatile and robust component used in many different electronic systems. The FET is widely used in consumer electronics, industrial automation, and automotive applications.
A FET is made up of an input gate, an output drain, and a control gate. These three terminals are responsible for controlling the flow of current from the input to the output. The input gate is used to provide the electrical connection between the input and output terminals. The control gate is responsible for controlling the current flow. When a voltage is applied to the control gate, it opens up the channel between the input and output, allowing current to flow through the FET.
The 0667434898 is a FET specifically designed for use in power applications. It is capable of handling currents up to 5 amp and is rated for a total continuous power dissipation of 2 watts. This FET is widely used in power amplifiers, power supplies, and audio circuits. It is also commonly used in automotive applications.
The working principle of a FET is based on the principle of semiconductor doping. The FET is composed of a semiconductor, such as silicon, with regions of its surface doped with impurities. The impurities used to create the regions are either n-type or p-type. In an n-type FET, the n-type impurities are used to create an electron-rich region. In contrast, the p-type impurities are used to create a region with an abundance of electron holes.
When a positive voltage is applied to the input gate, the electrons and electron holes become temporarily concentrated at the input gate and the control gate. This concentration of electrons and electron holes at the gate creates a potential barrier between the gates and the drain. As a result, the current will be restricted to flowing from the input to the output, and the FET will be said to be in the “enhancement” mode. When a negative voltage is applied to the input gate, the concentration of electrons and electron holes at the gate decreases, allowing current to flow more freely from the input to the output. The FET is said to be in the “depletion” mode in this situation.
The 0667434898 is a popular FET for many power applications due to its simple characteristics and reliable operation. The FET is easy to use and reliable in operation, making it ideal for use in consumer electronics, industrial automation, and automotive applications. It is also popular for use in power amplifiers, power supplies, and audio circuits.
The specific data is subject to PDF, and the above content is for reference
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