1.5KE130AHE3_A/D

Voltage - Clamping (Max) @ Ipp:	179V
Supplier Device Package:	1.5KE
Package / Case:	DO-201AA, DO-27, Axial
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Capacitance @ Frequency:	--
Applications:	Automotive
Power Line Protection:	No
Power - Peak Pulse:	1500W (1.5kW)
Current - Peak Pulse (10/1000µs):	8.4A
Series:	Automotive, AEC-Q101, TransZorb®
Voltage - Breakdown (Min):	124V
Voltage - Reverse Standoff (Typ):	111V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Box (TB)

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1.5KE130AHE3_A/D is a kind of TVS - Diode (Transient Voltage Suppressor - Diode). With this device, one can protect electronic circuit against potential transient voltage spikes, which can be caused by induction, lightning etc. It offers transient protection against the harsh and extreme transient conditions. 1.5KE130AHE3_A/D has a wide application field. It is suitable for communication systems, electronic and electrical systems, computer systems and equipment, automotive applications, renewable energy systems, electronic components and many other applications. The working principle of 1.5KE130AHE3_A/D is based on the fact that it has two electrodes, one of which is the anode and the other the cathode. The anode is connected to the external circuit and the cathode is connected to the base. When the external voltage exceeds the breakdown voltage, the device conducts and the current passes through it. The device will then clamp the voltage to its breakdown voltage, protecting the electronic circuit against damage. The working principle of 1.5KE130AHE3_A/D is based on the fact that it is a diode. It consists of a semiconductor layer with two ends. At one end, electrons are injected into the device and at the other end, electrons are collected. When the external voltage exceeds the breakdown voltage, the device conducts and the current passes through it. The working principle of 1.5KE130AHE3_A/D is also based on the avalanche breakdown effect. This occurs when a high electric field is present across the semiconductor layer. This results in the generation of electron-hole pairs which then move towards the anode and cathode respectively. The electron-hole pairs create a high electric field in the reverse direction and cause further breakdown, leading to the rapid flow of current through the device. 1.5KE130AHE3_A/D is a very useful device with many applications. It is used to protect electronic circuit against potential transient voltage spikes, making it an ideal choice for protecting delicate electronic circuits against damage. Moreover, it offers a large breakdown voltage, making it suitable for high voltage applications.

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