1.5KE6.8A-B

TVS (Transient Voltage Suppressor) is a semiconductor device that provides protection from electrical overstresses. The 1N6.8A-B is a unidirectional TVS diode designed for protection from overvoltage transients such as ESD (electrostatic discharge), EFT (electrical fast transients) and CDE (cable discharge events). It is intended for use in applications where protection against high voltage pulses is necessary, such as telecom systems, automotive, industrial control equipment and power supplies.

The 1N6.8A-B is an ideal replacement for other more traditional transient voltage suppressors such as Zener diodes. It is a high-speed semiconductor device that utilizes a proprietary, patent pending high-performance silicon avalanche technology to accurately and quickly dissipate large energy pulses with very low leakage current in a variety of applications.

The 1N6.8A-B is designed for a wide range of operating temperatures (-55°C to 125°C). It features low leakage current, fast response times, and excellent clamping performance. It is rated for a standoff voltage of 126 V and a maximum surge energy of 2.1 KV.

The working principle of a TVS diode is the same as other conventional unidirectional devices such as diodes and Zener diodes. It allows current to flow in a single direction, but will clamp a voltage higher than its rated breakdown voltage and limit the amount of current that can pass through it. The device will also continue to conduct current after the transient has passed, helping to reduce the risk of system damage.

The 1N6.8A-B is a robust TVS device with a wide operating range, making it suitable for many applications. Its ability to dissipate large energy pulses and withstand high temperatures make it well suited for protection against overvoltage transients in telecom systems, automotive, industrial control equipment, and power supplies.

In summary, the 1N6.8A-B is a unidirectional TVS diode designed to provide protection from overvoltage transients such as ESD, EFT, and cable discharge events. It utilizes a proprietary, patent-pending high-performance silicon avalanche technology to accurately and quickly dissipate large energy pulses with very low leakage current. It is rated for a maximum surge energy of 2.1 KV and is suitable for applications requiring high voltage transient protection.