1014-6A

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The 1014-6A transistor is a type of bipolar junction transistor (BJT) often used in radio frequency (RF) applications. It is a dual symmetrical NPN transistor package with a metal-oxide semiconductor field-effect transistor (MOSFET) base bandgap matched to the collector.

The 1014-6A is a high performance two-stage transistor made of silicon and integrated with numerous components and input and output stages. The active region of the transistor comprises two transistors connected internally in a balanced Darlington configuration. This configuration helps with providing maximum gain while still maintaining good power efficiency. When the transistor is turned on, the base-emitter voltage supplied to the transistor’s collector-emitter junction decreases. This decrease in voltage helps minimize distortion across the collector-emitter circuit.

The 1014-6A transistor is mainly used in the design and manufacture of HF amplifiers and other RF devices. It can be used to construct amplifiers for use in communication systems, audio devices, and instrumentation circuits. The device features a low base-to-emitter voltage, low collector-to-base capacitance and low base-emitter capacitance.

The 1014-6A transistor has a frequency response range of 5 Hz to 500 KHz and a voltage gain of betwee 30 dB and 100 dB. It has an input impedance of between 12 kilohms to 25 kilohms and an output impedance of between 1.9 kilohms to 22 kilohms. Other features of this transistor include an operating temperature range of -55ºC to +125ºC, a collector-emitter voltage of between 40V to 100V and an emitter-base voltage of between 5V to 10V.

The total power dissipation of the device is up to 200 mW, making it suitable for wide range of high-frequency applications. Furthermore, the device is ROHS compliant and has a wide variety of plastic packages to fit standard footprints.

In addition, the 1014-6A transistor features superior linearity, low noise levels and excellent RF power handling abilities. It has a low noise figure and low distortion levels, making it suitable for high quality receiver applications. It exhibits high RF input impedance and simplified circuit design, which allow for superior power output along with an extended range of input signals.

Overall, the 1014-6A transistor is an excellent choice for applications requiring high-frequency, low-noise, low-power and low-distortion. It is ideal for a wide variety of high-performance RF amplifier and other audio, communications and instrumentation applications.

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