Allicdata Part #: | 10ETF06-ND |
Manufacturer Part#: |
10ETF06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 10A TO220AC |
More Detail: | Diode Standard 600V 10A Through Hole TO-220AC |
DataSheet: | 10ETF06 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 145ns |
Current - Reverse Leakage @ Vr: | 100µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -40°C ~ 150°C |
Base Part Number: | 10ETF06 |
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A 10ETF06 is a single rectifier diode applied in commercial, industrial, and automotive applications. It is capable of handling reverse voltages up to 50 volts and withstanding temperatures between -40°C and 125°C. The 10ETF06 is used as an on-off switch and is employed in situations where intense heat and corrosive elements may be present.
The 10ETF06 is a part of a family of diodes called single-phase rectifier diodes. These types of diodes provide a low forward voltage drop and nearly no reverse recovery time. The 10ETF06 is a very robust device that is designed to withstand high temperature and vibration, as well as protect against a range of overvoltage and overcurrent issues. It is able to convert alternating current (AC) power into direct current (DC) power without the need for cooling fans or additional circuitry.
The 10ETF06 is capable of working with both AC and DC power, and has a very high reverse voltage ratio. It is also compatible with various types of signal lines, as well as provide excellent insulation resistance. The 10ETF06 has a very low forward voltage drop and the reverse recovery time is near zero, making it ideal for use in a variety of applications. The 10ETF06 has very low leakage current and is able to tolerate vibration in a range of -40°C to 125°C. Moreover, the 10ETF06 is designed to dissipate heat and is environmental friendly, which makes it an ideal choice for a variety of uses.
The 10ETF06 is designed to provide high reliability and a low forward voltage drop. It is commonly found in automotive and telecommunication applications. In automotive applications, the 10ETF06 functions as a starter diode, providing a basic protection function. It is also found in power supplies and the industrial automation industry. In the telecommunication sector, the diode is used to regulate and protect communication lines, providing an efficient and effective way to prevent signal interference or overvoltage and overcurrent damage. In addition, the 10ETF06 can be used as a switching mechanism for DC-DC and AC-DC converters.
The working principle of the 10ETF06 diode is based on the “P-N junction” diode. This type of diode contains two electrodes, an anode and a cathode. When a voltage is applied to the P-N junction, electric current will flow through the junction and the diode will become forward-biased. When the voltage is removed, the diode will become reverse-biased and the current will stop flowing. The 10ETF06 can withstand high temperatures and provide a low forward voltage drop and fast reverse recovery time, making it suitable for a wide range of applications.
The 10ETF06 is a single rectifier diode that is commonly used in commercial, industrial, and automotive applications. It is capable of handling reverse voltages up to 50 volts, and withstanding temperatures ranging from -40°C to 125°C. It is designed to provide a low forward voltage drop and nearly no reverse recovery time. The 10ETF06 is highly reliable and efficient, and is capable of converting AC power into DC power. It is compatible with various types of signal lines and provides excellent insulation resistance. It also has a very low leakage current and is able to tolerate vibration in a range of -40°C to 125°C. The 10ETF06 has a working principle based on the “P-N junction” diode, which allows current to flow through the junction in a forward-biased state, and no current to flow in a reverse-biased state. It is well suited for automotive and telecommunication applications, as well as in power supplies and industrial automation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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VS-10ETS12FP-M3 | Vishay Semic... | 2.58 $ | 774 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETF12-M3 | Vishay Semic... | -- | 214 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETF04-M3 | Vishay Semic... | 2.72 $ | 147 | DIODE GEN PURP 400V 10A T... |
10ET1 | TE Connectiv... | 39.76 $ | 64 | LINE FILTER 250VAC 10A CH... |
VS-10ETF06PBF | Vishay Semic... | 2.01 $ | 1437 | DIODE GEN PURP 600V 10A T... |
VS-10ETF12FPPBF | Vishay Semic... | -- | 1249 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETF12PBF | Vishay Semic... | 2.04 $ | 357 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETS10S-M3 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 1KV 10A D2... |
VS-10ETS12S-M3 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETS08S-M3 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 800V 10A D... |
VS-10ETF06S-M3 | Vishay Semic... | 0.62 $ | 1000 | DIODE GEN PURP 600V 10A D... |
VS-10ETF12S-M3 | Vishay Semic... | 0.62 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETF10S-M3 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 1KV 10A D2... |
VS-10ETF02S-M3 | Vishay Semic... | 0.64 $ | 1000 | DIODE GEN PURP 200V 10A D... |
VS-10ETF04S-M3 | Vishay Semic... | 0.64 $ | 1000 | DIODE GEN PURP 400V 10A D... |
VS-10ETS08STRR-M3 | Vishay Semic... | 0.73 $ | 1000 | DIODE GEN PURP 800V 10A D... |
VS-10ETS10STRL-M3 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 1KV 10A D2... |
VS-10ETS10STRR-M3 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 1KV 10A D2... |
VS-10ETS12STRR-M3 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETS12STRL-M3 | Vishay Semic... | 0.77 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETS08STRL-M3 | Vishay Semic... | 0.78 $ | 1000 | DIODE GEN PURP 800V 10A D... |
VS-10ETF02STRL-M3 | Vishay Semic... | 0.76 $ | 1000 | DIODE GEN PURP 200V 10A D... |
VS-10ETF12STRL-M3 | Vishay Semic... | 0.76 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETF02STRR-M3 | Vishay Semic... | 0.77 $ | 1000 | DIODE GEN PURP 200V 10A D... |
VS-10ETF04STRL-M3 | Vishay Semic... | 0.77 $ | 1000 | DIODE GEN PURP 400V 10A D... |
VS-10ETF04STRR-M3 | Vishay Semic... | 0.86 $ | 1000 | DIODE GEN PURP 400V 10A D... |
VS-10ETF06STRR-M3 | Vishay Semic... | 0.77 $ | 1000 | DIODE GEN PURP 600V 10A D... |
VS-10ETF10STRL-M3 | Vishay Semic... | 0.86 $ | 1000 | DIODE GEN PURP 1KV 10A D2... |
VS-10ETF10STRR-M3 | Vishay Semic... | 0.77 $ | 1000 | DIODE GEN PURP 1KV 10A D2... |
VS-10ETF12STRR-M3 | Vishay Semic... | 0.77 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
10ETF02 | Vishay Semic... | 0.78 $ | 1000 | DIODE GEN PURP 200V 10A T... |
VS-10ETF06STRL-M3 | Vishay Semic... | 0.9 $ | 1000 | DIODE GEN PURP 600V 10A D... |
VS-10ETS12SLHM3 | Vishay Semic... | 0.78 $ | 1000 | DIODES - D2PAK-E3Diode St... |
VS-10ETF06SLHM3 | Vishay Semic... | 0.88 $ | 1000 | DIODES - D2PAK-E3Diode St... |
VS-10ETF12SLHM3 | Vishay Semic... | 0.88 $ | 1000 | DIODES - D2PAK-E3Diode St... |
10ETF04 | Vishay Semic... | 0.88 $ | 1000 | DIODE GEN PURP 400V 10A T... |
VS-10ETS12PBF | Vishay Semic... | 1.28 $ | 45 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETS08STRLPBF | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 10A T... |
VS-10ETS08FPPBF | Vishay Semic... | 2.03 $ | 745 | DIODE GEN PURP 800V 10A T... |
VS-10ETF10FPPBF | Vishay Semic... | 2.03 $ | 18 | DIODE GEN PURP 1KV 10A TO... |
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