11LC040-E/SN Allicdata Electronics
Allicdata Part #:

11LC040-E/SN-ND

Manufacturer Part#:

11LC040-E/SN

Price: $ 0.19
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 4K SINGLE WIRE 8SOIC
More Detail: EEPROM Memory IC 4Kb (512 x 8) Single Wire 100kHz ...
DataSheet: 11LC040-E/SN datasheet11LC040-E/SN Datasheet/PDF
Quantity: 1000
1300 +: $ 0.16871
Stock 1000Can Ship Immediately
$ 0.19
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: 11LC040
Description

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The 11LC040-E/SN memory device is a low-power serial SRAM developed by semiconductor manufacturer Idemitsu Kosan. It is widely used in applications such as handheld devices, intelligent controllers, medical instruments, and communications systems for its low power consumption, high speed, and reliability. This article will explain the application field and working principle of the 11LC040-E/SN.The 11LC040-E/SN is suitable for use in embedded memories, microcontrollers, and power management systems due to its low voltage operation, wide operating temperature range, limited power consumption, and high level of integration. Applications include computer systems, industrial control systems, communications systems, and digital home applications.The 11LC040-E/SN is a 4K-bit static random access memory (SRAM) device with a data access time of 40 ns. It has an operating voltage range of 3.3 to 5.5 volts, operates within a wide temperature range of -40 to +85 °C, and offers a write throughput of two words (8 bytes) per cycle.The 11LC040-E/SN uses a static memory cell structure consisting of four transistors and one capacitor. Data stored in the memory cell is retained as long as the power supply voltage is maintained. The memory cell is selected by applying a "row select" (RS) and "column select" (CS) address to the chip. To read data, the RS and CS signals are generated in the form of a high voltage cascade by the 11LC040-E/SN. The data read from the memory cell is sent out as a digital signal. To write data into the memory, the user must apply both the RS and CS signals along with the write data.The 11LC040-E/SN also has advanced features such as error detection and correction. Data protection can be achieved through ECC (Error Correction Code) or parity check. In addition, the device provides an auto wake-up function to conserve power when unused and a program power-down/power-up sequence to protect against inadvertent data corruption.Overall, the 11LC040-E/SN is an ideal product for embedded systems, microcontrollers, and power management systems, due to its low power consumption, high speed, wide operating temperature range, and a high level of integration. The device provides fast access times, high-quality data retention and comprehensive protection features.

The specific data is subject to PDF, and the above content is for reference

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