11LC020-E/MS

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	2Kb (256 x 8)
Clock Frequency:	100kHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	Single Wire
Voltage - Supply:	2.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package:	8-MSOP
Base Part Number:	11LC020

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Introduction

The 11LC020-E/MS (20-bit E/MS) is a type of memory used in various application fields. It is a high-density, low-power SRAM suitable for use in designs that need to provide large amounts of memory to handle an application’s data needs. This type of memory is suitable for use in embedded systems, portable and mobile applications, medical devices, healthcare applications, and other high-performance and resource-intensive applications.

Application Field and Working Principle

The 11LC020-E/MS is a high-density, asynchronous SRAM that has been designed to use a parallel-data bus architecture. It is capable of supporting high data throughput and can support up to 20-bits of data in an asynchronous SRAM configuration. The memory is designed to operate at voltages between 2.5V and 3.5V and can support up to 66MHz clock speeds.The 11LC020-E/MS is designed for use in a wide variety of applications, from automotive to aerospace. The memory can be integrated into applications such as embedded systems, control systems, medical devices, and other high-end applications that have tight power and space constraints. The 11LC020-E/MS provides an easy way to expand the memory capacities of applications, allowing them to handle more data.In order to use the 11LC020-E/MS, the user must first configure the memory device. This includes selecting the size of the memory you wish to use, the type of SRAM, if it is asynchronous or synchronous, and the clock frequency. Once the memory has been configured, the user can input data into the memory and the 11LC020-E/MS will store it. The data stored can then be retrieved when needed, allowing the user to access the data in a much quicker manner.The 11LC020-E/MS uses a parallel interface which enables high-speed data transfers. The memory device is also capable of supporting multiple operations at the same time, allowing for more efficient data transfers and higher performance.The 11LC020-E/MS also features a built-in error-correction code (ECC) that can detect and correct errors in data stored in the memory, ensuring data integrity and ensuring reliable data transfer.

Conclusion

The 11LC020-E/MS is an asynchronous SRAM memory device, suitable for use in a wide range of applications in embedded systems and other high-performance applications. The memory is designed for applications that require large amounts of memory and can handle up to 20-bits of data with a parallel-data bus architecture. The 11LC020-E/MS is capable of supporting multiple operations and has a built-in ECC for data integrity. This type of memory is capable of providing efficient storage and data transfers and is suitable for a wide range of applications.

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