11LC161-E/SN Allicdata Electronics
Allicdata Part #:

11LC161-E/SN-ND

Manufacturer Part#:

11LC161-E/SN

Price: $ 0.21
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 16K SINGLE WIRE 8SOIC
More Detail: EEPROM Memory IC 16Kb (2K x 8) Single Wire 100kHz ...
DataSheet: 11LC161-E/SN datasheet11LC161-E/SN Datasheet/PDF
Quantity: 1000
1100 +: $ 0.18818
Stock 1000Can Ship Immediately
$ 0.21
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: 11LC161
Description

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Memory is an important component in digital devices and systems. One of the most popular types of memory is the 11LC161-E/SN memory. This type of memory is used in many different types of applications, ranging from data storage, to automotive electronics, to industrial controllers.

The 11LC161-E/SN memory is a type of synchronous dynamic random access memory (SDRAM). It has a wide variety of advantages over other types of memory, including speed, capacity, and power efficiency. It is also highly reliable, making it a popular choice for mission critical applications.

The 11LC161-E/SN memory has a capacity of 16 megabits and is packaged in a 64-pin thin small outline package (TSOP). The TSOP package was originally designed for low-profile, high-density applications, but is also used in many other applications due to its compact size.

The 11LC161-E/SN memory can operate in both asynchronous and synchronous modes. In asynchronous mode, the memory will operate at a frequency of up to 133MHz, while in synchronous mode it will operate at up to 200MHz. The device has a burst rate of 8 and supports both 3-byte and 4-byte bursts.

The working principle of the 11LC161-E/SN memory is based on the concept of dynamic random access memory cells or DRAM cells. DRAM cells are composed of a single transistor and one or more capacitors. These cells store information by storing electric charges in the capacitors for a fixed amount of time, after which the charges must be refreshed in order to maintain the information. The charge is then read out from the capacitors, allowing the information to be used by external devices.

The 11LC161-E/SN is typically used in applications where large amounts of data need to be stored and quickly accessed. With its high speed, power efficiency, and reliability, it is often used in industrial controllers and automotive electronics, as well as in data storage and telecommunications applications.

In summary, the 11LC161-E/SN memory is a type of synchronous dynamic random access memory (SDRAM) with 16 megabits of capacity and up to 200MHz of speed. It is packaged in a 64-pin thin small outline package and is used in many different applications, such as data storage, automotive electronics, industrial controllers, and telecommunications. The working principle is based on the concept of dynamic random access memory cells which store information in capacitors that must be periodically refreshed.

The specific data is subject to PDF, and the above content is for reference

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