| Allicdata Part #: | 12A02MH-TL-EOSTR-ND |
| Manufacturer Part#: |
12A02MH-TL-E |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 12V 1A MCPH3 |
| More Detail: | Bipolar (BJT) Transistor PNP 12V 1A 450MHz 600mW S... |
| DataSheet: | 12A02MH-TL-E Datasheet/PDF |
| Quantity: | 6000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 1A |
| Voltage - Collector Emitter Breakdown (Max): | 12V |
| Vce Saturation (Max) @ Ib, Ic: | 240mV @ 20mA, 400mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 10mA, 2V |
| Power - Max: | 600mW |
| Frequency - Transition: | 450MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 3-SMD, Flat Leads |
| Supplier Device Package: | 3-MCPH |
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The 12A02MH-TL-E is a premium, high-powered, high-performance transistor designed for use in a variety of applications. The transistor is a single-stage bipolar junction transistor (BJT), which utilizes both p-type and n-type materials in its construction.
A transistor is essentially an active device that can be used to switch, control and regulate circuits, signals, and power devices within a variety of systems. Generally, BJTs use three p-n junctions, two of which act to control the current gain, and the third which acts as the output.
The 12A02MH-TL-E is produced using advanced techniques and high-grade semiconductor materials. This ensures a reliable product which is equipped to handle heavy-duty operations with ease. It has an extended temperature range of -55°C to +150°C, which means it is applicable in a wide range of environments and conditions.
The 12A02MH-TL-E has a plethora of features that make it a great choice for use in many applications. It features maximum rating and electrical characteristics, including a collector-base reverse breakdown voltage of 15V, a collector-emitter saturation voltage of 1.2V, and a collector-emitter cutoff voltage of 0.8V.
The working principle of the 12A02MH-TL-E is simple yet effective. A small current is applied at the base of the transistor, and this current causes the transistor to provide a signal at the collector. This signal is then amplified and delivered to the output.
Because of its power, performance, features, and reliability, the 12A02MH-TL-E is suitable for use in a variety of applications. The most common applications are power switching, voltage regulation, signal amplification, and signal transfer. The 12A02MH-TL-E is often used in consumer electronics, motor drives, mobile device applications, automotive and aerospace systems, and medical equipment.
The 12A02MH-TL-E is a reliable, durable, and powerful transistor with many great features. It is available in a variety of packages, making it suitable for all types of applications. Its extended temperature range also allows for use in a wide range of environmental conditions. Whether it is for consumer electronics, motor drives, mobile device applications, automotive and aerospace systems, or medical equipment, the 12A02MH-TL-E is a great choice for any application requiring a dependable single-stage BJT.
The specific data is subject to PDF, and the above content is for reference
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12A02MH-TL-E Datasheet/PDF