153CNQ100 Allicdata Electronics
Allicdata Part #:

153CNQ100-ND

Manufacturer Part#:

153CNQ100

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY SCHOTTKY 100V D60
More Detail: Diode Array 1 Pair Common Cathode Schottky 100V 15...
DataSheet: 153CNQ100 datasheet153CNQ100 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 1.19V @ 150A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1.5mA @ 100V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: TO-249AA (Modified), D-60
Supplier Device Package: D-60
Description

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Diodes - Rectifiers - Arrays

The 153CNQ100 application field and working principle is a specialized field within diode rectifier arrays that is important for power conversion and power management. This diode find uses in applications that require high frequency, high voltage, and high current. It is ideal for applications in buildings, data centers, solar, power supplies, and other such demanding applications. This is a powerful, reliable, and efficient component that can be used in numerous ways.

The diode can be used as an isolating device or controller device, or both. In the function of an isolator, the diode serves to allow current to flow in one direction but not in the other. This is called the “blocking” state. If the need arises, the diode can also be used in a conduction role, forming a current path for current to flow in either direction.

The principle of operation for the 153CNQ100 is based on the PN junction theory. This diode uses a combination of N-type and P-type semi-conductor materials to create a barrier in the form of a junction. The current limiting properties of the diode depend on the junction details and construction materials used. The two different materials combine to form two oppositely charged semi-conductor regions called N-type and P-type. N-type regions are positively charged while P-type regions are negatively charged.

When the proper voltage is applied to the junction region, electrons initially accumulate on the P-side and holes accumulate on the N-side. This is known as forward bias. The majority carriers are now drawn away to the other side of the junction, and a lower resistance path is created in the opposite direction. This is known as reverse bias.

The N-type material acts as an anode, which is at a higher potential than the P-type material, which acts as the cathode. This provides an efficient form of rectification because current is only allowed to flow in one direction or the other. This helps to reduce the effects of line-to-line noise, especially at high frequencies, making it a desirable device for data centers, computers, and audio systems.

The 153CNQ100 also offers protection against over-voltage surges. It is rated to handle surges up to 2kV and is highly resistant to high frequency noise. The diode can also be used in cascading circuits or other such shielding or filtering applications. It is a reliable and efficient device, which provides excellent performance and power management.

In summary, the 153CNQ100 diode rectifier array is suitable for a wide range of applications from data centers to solar systems. It offers excellent performance, including the ability to block and direct current. It also provides over-voltage protection and excellent power management capability. It is a reliable and efficient device, and its usefulness is assured in many different fields no matter the task at hand.

The specific data is subject to PDF, and the above content is for reference

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