1M160Z A0G

1M160Z A0G Application Field and Working Principle

1M160Z A0G is an efficient, cost-effective solution for the application field of single Zener diode. It is developed to bridge the current need for a robust, low-cost and high-performance Zener diode, providing designers greater flexibility and reduced time-rejection rates. 1M160Z A0G is a double-ringed, full-bridge rectifier with a high-voltage breakdown process, enabling extremely fast, low-voltage switching up to a maximum of 4 kilovolts (V).

Features

• High-voltage breakdown voltage: Maximum 4 KV (V).
• Low-voltage switching: Maximum 1 KV (V).

Applications

• DC-DC DC-AC conversion.
• High-voltage switching.
• Telecommunication power converters.

Working Principle

The 1M160Z A0G Zener diode is designed to work by the N-type doping in its two-ringed bridge process. Adding a higher energy gap in its silicone junction reduces the voltage needed to breakdown, which is why its maximum breakdown voltage is only 4 KV (V). Basically, 1M160Z A0G is able to promote fast and precise current conduction in an environment where a higher-voltage breakdown is required. The silicon-oxide surface can also be implemented to further increase the voltage up to 1 KV (V).

Device Structure

The 1M160Z A0G Zener diode is composed of a double-ringed and full-bridge silicon-oxide material. The two rings are connected by a number of N-type doping points, providing the internal conduction to regulate the current flow. By configuring the silicon-oxide layer in different thicknesses and shapes, a higher breakdown voltage can be obtained. The device also has a double-ringed construction to help the switch-mode performance and reduce the switching time.

Benefits

• Cost-effective compared with other diodes.
• Provides voltage stability with its high-voltage breakdown.
• Provides fast switching performance with its silicon-oxide surface layer.
• It can be used in a wide range of applications, such as DC-DC connectivity, high-voltage switching, and telecommunication power converters.

Conclusion

GaAs-semiconductor based Zener diodes, such as 1M160Z A0G, are a cost-effective and robust solution to meet the requirements of high-voltage applications. With its high-voltage breakdown, fast switching performance and versatile design advantages, 1M160Z A0G is an ideal choice for a variety of applications that require high speed and accuracy. The device also provides designers with greater design flexibility, allowing them to impose higher voltage levels in their circuit designs.