Allicdata Part #: | 1N1186GN-ND |
Manufacturer Part#: |
1N1186 |
Price: | $ 3.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP 200V 35A DO5 |
More Detail: | Diode Standard 200V 35A Chassis, Stud Mount DO-5 |
DataSheet: | 1N1186 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 3.38279 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 35A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 35A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -65°C ~ 190°C |
Base Part Number: | 1N1186 |
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The 1N1186 is a type of diode rectifier, specifically a single rectifier. It is a silicon controlled rectifier (SCR) type of rectifier, meaning the device contains a gate that allows the current to flow one direction but not the other. This allows for a greater amount of current to pass than with traditional diodes.
1N1186 rectifiers are used in a variety of applications where it is important to control the direction of current flow, such as in power supplies, motor drives, inverter circuits, and voltage regulation. The device can also be used as a switching element in various circuits. The 1N1186 is rated for up to 600 volts, with a current rating of up to 8 amps.
The working principle of the 1N1186 is the same as other SCR devices. An external voltage is applied to the device, which causes a gate voltage to be created. When this gate voltage is applied, the current can flow through the device. When no gate voltage is applied, the current will not flow. This makes it a very convenient device for controlling the flow of current.
The 1N1186 has several advantages over other rectifiers. It is a compact device, meaning it can be used in a wide variety of applications. It also has a low voltage drop, which reduces power losses and increases efficiency. It also has a wide temperature range, which allows it to operate in a range of environments. This, combined with its high current ratings and fast conduction times, makes it an ideal device for power supply and control applications.
In conclusion, the 1N1186 is a single rectifier, specifically a silicon controlled rectifier. It is used to control the direction of current flow, allowing it to be used in numerous applications such as power supplies, motor drives, and inverter circuits. The device has a low voltage drop and a wide temperature range, allowing it to operate in many environments. These features combined with its fast conduction times and high current ratings make it an ideal device for power supply and control applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
VS-1N1184RA | Vishay Semic... | 4.35 $ | 4374 | DIODE GEN PURP 100V 40A D... |
VS-1N1183A | Vishay Semic... | 5.9 $ | 6906 | DIODE GEN PURP 50V 40A DO... |
1N1184A | GeneSiC Semi... | 4.6 $ | 21 | DIODE GEN PURP 100V 40A D... |
VS-1N1190RA | Vishay Semic... | 6.11 $ | 96 | DIODE GEN PURP 600V 40A D... |
1N1184 | GeneSiC Semi... | 6.9 $ | 97 | DIODE GEN PURP 100V 35A D... |
VS-1N1199A | Vishay Semic... | 3.19 $ | 29 | DIODE GEN PURP 50V 12A DO... |
VS-1N1188 | Vishay Semic... | 4.53 $ | 97 | DIODE GEN PURP 400V 35A D... |
1N1186AR | GeneSiC Semi... | 4.92 $ | 53 | DIODE GEN PURP REV 200V 4... |
VS-1N1186RA | Vishay Semic... | 5.28 $ | 63 | DIODE GEN PURP 200V 40A D... |
VS-1N1190 | Vishay Semic... | 6.01 $ | 75 | DIODE GEN PURP 600V 35A D... |
VS-1N1190A | Vishay Semic... | 6.11 $ | 58 | DIODE GEN PURP 600V 40A D... |
1N1186A | GeneSiC Semi... | 4.63 $ | 55 | DIODE GEN PURP 200V 40A D... |
1N1190A | GeneSiC Semi... | 4.63 $ | 220 | DIODE GEN PURP 600V 40A D... |
VS-1N1186 | Vishay Semic... | 4.71 $ | 269 | DIODE GEN PURP 200V 35A D... |
1N1190AR | GeneSiC Semi... | 4.82 $ | 124 | DIODE GEN PURP REV 600V 4... |
VS-1N1188A | Vishay Semic... | 6.16 $ | 174 | DIODE GEN PURP 400V 40A D... |
VS-1N1187A | Vishay Semic... | 4.4 $ | 11 | DIODE GEN PURP 300V 40A D... |
VS-1N1190R | Vishay Semic... | 4.77 $ | 1000 | DIODE GEN PURP 600V 35A D... |
1N1188R | GeneSiC Semi... | 4.91 $ | 95 | DIODE GEN PURP REV 400V 3... |
VS-1N1186A | Vishay Semic... | 4.42 $ | 996 | DIODE GEN PURP 200V 40A D... |
VS-1N1183 | Vishay Semic... | 4.82 $ | 9 | DIODE GEN PURP 50V 35A DO... |
VS-1N1184 | Vishay Semic... | 4.82 $ | 1 | DIODE GEN PURP 100V 35A D... |
VS-1N1184A | Vishay Semic... | 5.96 $ | 6 | DIODE GEN PURP 100V 40A D... |
1N1199A | GeneSiC Semi... | 2.07 $ | 1000 | DIODE GEN PURP 50V 12A DO... |
1N1199AR | GeneSiC Semi... | 2.17 $ | 1000 | DIODE GEN PURP REV 50V 12... |
VS-1N1199RA | Vishay Semic... | 2.47 $ | 1000 | DIODE GEN PURP 50V 12A DO... |
VS-1N1186R | Vishay Semic... | 2.92 $ | 1000 | DIODE GEN PURP 200V 35A D... |
VS-1N1187 | Vishay Semic... | 3.01 $ | 1000 | DIODE GEN PURP 300V 35A D... |
1N1190R | GeneSiC Semi... | 3.11 $ | 1000 | DIODE GEN PURP REV 600V 3... |
VS-1N1183R | Vishay Semic... | 3.23 $ | 1000 | DIODE GEN PURP 50V 35A DO... |
VS-1N1185A | Vishay Semic... | 3.26 $ | 1000 | DIODE GEN PURP 150V 40A D... |
VS-1N1188RA | Vishay Semic... | 3.34 $ | 1000 | DIODE GEN PURP 400V 40A D... |
VS-1N1188R | Vishay Semic... | 3.39 $ | 1000 | DIODE GEN PURP 400V 35A D... |
1N1184AR | GeneSiC Semi... | 3.44 $ | 1000 | DIODE GEN PURP REV 100V 4... |
1N1183R | GeneSiC Semi... | 3.45 $ | 1000 | DIODE GEN PURP REV 50V 35... |
1N1186R | GeneSiC Semi... | 3.47 $ | 1000 | DIODE GEN PURP REV 200V 3... |
1N1188AR | GeneSiC Semi... | 3.54 $ | 1000 | DIODE GEN PURP REV 400V 4... |
1N1187 | GeneSiC Semi... | -- | 130 | DIODE GEN PURP 300V 35A D... |
1N1186 | GeneSiC Semi... | 3.76 $ | 1000 | DIODE GEN PURP 200V 35A D... |
VS-1N1189A | Vishay Semic... | 4.01 $ | 1000 | DIODE GEN PURP 500V 40A D... |
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