Allicdata Part #: | 1242-1094-ND |
Manufacturer Part#: |
1N1188R |
Price: | $ 4.91 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP REV 400V 35A DO5 |
More Detail: | Diode Standard, Reverse Polarity 400V 35A Chassis,... |
DataSheet: | 1N1188R Datasheet/PDF |
Quantity: | 95 |
1 +: | $ 4.42260 |
10 +: | $ 3.97782 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 35A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 35A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -65°C ~ 190°C |
Base Part Number: | 1N1188R |
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The 1N1188R is a silicon 1 Amp, 50 to 1000 Volts rectifier diode. It is often used in rectifier circuits, alternative current (AC) to direct current (DC) power conversion, and general purpose switching, among other applications. It is typically found in electronic devices such as TVs, radios, computers and other electronic appliances. This diode is especially ideal for use in high-speed applications since it has a low forward voltage drop and low reverse-recovery time.
The 1N1188R is designed to pass current in one direction, with the electricity flowing from the anode to the cathode. When a voltage is applied across the diode’s anode and cathode pins, the diode conducts a current. The current stays constant until the voltage across the diode reaches its maximum rating of 1000V or the current through the diode reaches its maximum rated value of 1 Amp. When these parameters are exceeded, the diode ceases to conduct current. This process is known as “breaking over” and occurs when the diode’s power rating is exceeded.
The 1N1188R diode also has a reverse-breakdown voltage rating of 50V. This means that if the voltage in reverse bias (reverse voltage applied across the diode’s anode-cathode pins) is greater than 50V, the diode will not conduct any current. The reverse current is often called leakage current and is used to illuminate indicator lights and other miniature devices.
The 1N1188R diode is used in a variety of applications, such as lightning suppressors, converters for alternators, electronic power controls, frequency changers, voltage doublers and dc-dc converters. It is also used in telecommunications and switching circuits, TTL logic gates and in silencers, among other applications.
In AC to DC power conversion, the 1N1188R rectifier diode helps convert AC voltage to a steady DC voltage. It provides a low forward voltage drop and low reverse-recovery time, which is especially useful in high-speed operations. It is typically used to rectify the signal of networks with various types of voltage, such as the single-phase alternating current used in residential homes. The diode is also used to transform single-phase rectifier networks, which are often used for power conditioning purposes.
The 1N1188R rectifier diode is also often used in switching circuits and general-purpose relays. It can be used to switch higher current levels and provide a smooth transition from one state to another. This diode also helps regulate higher power loads and can be used in multiple circuits simultaneously. In high-voltage conditions, the 1N1188R rectifier diode helps reduce sparking and increases contact life.
The 1N1188R rectifier is an ideal choice for applications that require low forward voltage drop and low reverse-recovery time, such as in rectifier circuits, AC to DC power conversions, and general-purpose switching. It is commonly used in many electronic devices, telecommunications systems, and switching circuits. It can also help reduce sparking and increase contact life, making it a great choice for high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
VS-1N1184RA | Vishay Semic... | 4.35 $ | 4374 | DIODE GEN PURP 100V 40A D... |
VS-1N1183A | Vishay Semic... | 5.9 $ | 6906 | DIODE GEN PURP 50V 40A DO... |
1N1184A | GeneSiC Semi... | 4.6 $ | 21 | DIODE GEN PURP 100V 40A D... |
VS-1N1190RA | Vishay Semic... | 6.11 $ | 96 | DIODE GEN PURP 600V 40A D... |
1N1184 | GeneSiC Semi... | 6.9 $ | 97 | DIODE GEN PURP 100V 35A D... |
VS-1N1199A | Vishay Semic... | 3.19 $ | 29 | DIODE GEN PURP 50V 12A DO... |
VS-1N1188 | Vishay Semic... | 4.53 $ | 97 | DIODE GEN PURP 400V 35A D... |
1N1186AR | GeneSiC Semi... | 4.92 $ | 53 | DIODE GEN PURP REV 200V 4... |
VS-1N1186RA | Vishay Semic... | 5.28 $ | 63 | DIODE GEN PURP 200V 40A D... |
VS-1N1190 | Vishay Semic... | 6.01 $ | 75 | DIODE GEN PURP 600V 35A D... |
VS-1N1190A | Vishay Semic... | 6.11 $ | 58 | DIODE GEN PURP 600V 40A D... |
1N1186A | GeneSiC Semi... | 4.63 $ | 55 | DIODE GEN PURP 200V 40A D... |
1N1190A | GeneSiC Semi... | 4.63 $ | 220 | DIODE GEN PURP 600V 40A D... |
VS-1N1186 | Vishay Semic... | 4.71 $ | 269 | DIODE GEN PURP 200V 35A D... |
1N1190AR | GeneSiC Semi... | 4.82 $ | 124 | DIODE GEN PURP REV 600V 4... |
VS-1N1188A | Vishay Semic... | 6.16 $ | 174 | DIODE GEN PURP 400V 40A D... |
VS-1N1187A | Vishay Semic... | 4.4 $ | 11 | DIODE GEN PURP 300V 40A D... |
VS-1N1190R | Vishay Semic... | 4.77 $ | 1000 | DIODE GEN PURP 600V 35A D... |
1N1188R | GeneSiC Semi... | 4.91 $ | 95 | DIODE GEN PURP REV 400V 3... |
VS-1N1186A | Vishay Semic... | 4.42 $ | 996 | DIODE GEN PURP 200V 40A D... |
VS-1N1183 | Vishay Semic... | 4.82 $ | 9 | DIODE GEN PURP 50V 35A DO... |
VS-1N1184 | Vishay Semic... | 4.82 $ | 1 | DIODE GEN PURP 100V 35A D... |
VS-1N1184A | Vishay Semic... | 5.96 $ | 6 | DIODE GEN PURP 100V 40A D... |
1N1199A | GeneSiC Semi... | 2.07 $ | 1000 | DIODE GEN PURP 50V 12A DO... |
1N1199AR | GeneSiC Semi... | 2.17 $ | 1000 | DIODE GEN PURP REV 50V 12... |
VS-1N1199RA | Vishay Semic... | 2.47 $ | 1000 | DIODE GEN PURP 50V 12A DO... |
VS-1N1186R | Vishay Semic... | 2.92 $ | 1000 | DIODE GEN PURP 200V 35A D... |
VS-1N1187 | Vishay Semic... | 3.01 $ | 1000 | DIODE GEN PURP 300V 35A D... |
1N1190R | GeneSiC Semi... | 3.11 $ | 1000 | DIODE GEN PURP REV 600V 3... |
VS-1N1183R | Vishay Semic... | 3.23 $ | 1000 | DIODE GEN PURP 50V 35A DO... |
VS-1N1185A | Vishay Semic... | 3.26 $ | 1000 | DIODE GEN PURP 150V 40A D... |
VS-1N1188RA | Vishay Semic... | 3.34 $ | 1000 | DIODE GEN PURP 400V 40A D... |
VS-1N1188R | Vishay Semic... | 3.39 $ | 1000 | DIODE GEN PURP 400V 35A D... |
1N1184AR | GeneSiC Semi... | 3.44 $ | 1000 | DIODE GEN PURP REV 100V 4... |
1N1183R | GeneSiC Semi... | 3.45 $ | 1000 | DIODE GEN PURP REV 50V 35... |
1N1186R | GeneSiC Semi... | 3.47 $ | 1000 | DIODE GEN PURP REV 200V 3... |
1N1188AR | GeneSiC Semi... | 3.54 $ | 1000 | DIODE GEN PURP REV 400V 4... |
1N1187 | GeneSiC Semi... | -- | 130 | DIODE GEN PURP 300V 35A D... |
1N1186 | GeneSiC Semi... | 3.76 $ | 1000 | DIODE GEN PURP 200V 35A D... |
VS-1N1189A | Vishay Semic... | 4.01 $ | 1000 | DIODE GEN PURP 500V 40A D... |
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