| Allicdata Part #: | 1N3891RGN-ND |
| Manufacturer Part#: |
1N3891R |
| Price: | $ 3.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | GeneSiC Semiconductor |
| Short Description: | DIODE GEN PURP REV 200V 12A DO4 |
| More Detail: | Diode Standard, Reverse Polarity 200V 12A Chassis,... |
| DataSheet: | 1N3891R Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 2.76639 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max): | 200V |
| Current - Average Rectified (Io): | 12A |
| Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 12A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 200ns |
| Current - Reverse Leakage @ Vr: | 25µA @ 50V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Chassis, Stud Mount |
| Package / Case: | DO-203AA, DO-4, Stud |
| Supplier Device Package: | DO-4 |
| Operating Temperature - Junction: | -65°C ~ 150°C |
| Base Part Number: | 1N3891R |
Description
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Diodes - Rectifiers - Single: 1N3891R Application Field and Working Principle
The 1N3891R diode is a silicon rectifier diode designed for use in reverse voltage applications in various electronic circuits. It is a part of the 1N38xx family of rectifier diodes and has a rated reverse voltage of 40 volts. This diode is typically used in power supplies and in applications such as voltage regulators, voltage multipliers, rectifiers, and other devices where a reverse voltage is necessary. The 1N3891R diode is constructed with the JEDEC three-layer common cathode (CC) diode structure. This diode has a PN junction that acts as a rectifier between its source and drain. The diode has a lead spacing of .6" and is rated for operation at temperatures up to 150°C. The current rating of the 1N3891R diode is 5A. This rating is based on the forward voltage drop (VF) across the diode and the power dissipation. The forward voltage drop is the voltage drop across the diode when it is conducting current in the forward direction. The maximum forward voltage drop of the 1N3891R diode is 1.1 volts. The maximum power dissipation of the 1N3891R diode is rated at 8 watts. The power dissipation rating is based on the area of the diode, the maximum junction temperature, and the package lead temperature. The maximum junction temperature is the maximum temperature that the junction between the source and drain can reach before the diode will cease to function. The package lead temperature is the maximum temperature that the leads that attach the diode to the circuit board can reach before the diode will cease to function. The reverse breakdown voltage of the 1N3891R diode is rated at 40 volts. This rating is based on the current flow through the diode when it is in the reverse direction. When the diode is in the reverse direction, the current flowing through it is the same as the reverse breakdown voltage. The 1N3891R diode is a good choice for use in applications where a reverse voltage must be specified. Its low forward voltage drop and high reverse breakdown voltage make it ideal for power supplies and other applications where rectification is necessary. The low power dissipation rating makes it an excellent choice for use in high temperature environments. The diode is also RoHS compliant and is typically used in lead-free applications. The 1N3891R diode is a popular choice for many electronic applications and is widely available.The specific data is subject to PDF, and the above content is for reference
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1N3891R Datasheet/PDF