
Allicdata Part #: | 1N4109UR-1-ND |
Manufacturer Part#: |
1N4109UR-1 |
Price: | $ 2.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | ZENER DIODE |
More Detail: | Zener Diode |
DataSheet: | ![]() |
Quantity: | 1000 |
264 +: | $ 2.32518 |
Series: | * |
Part Status: | Active |
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The 1N4109UR-1 diode is a Zener diode, which belongs to the single diode category. It is developed for the specific purpose of providing a stable, low noise reference voltage supply to circuits in the signal path.
In general, diodes are two terminal components that allow current to flow in one direction only, preventing it from flowing in the opposite direction. The 1N4109UR-1 diode adds two more features to this, i.e. it incorporates Zener breakdown and avalanche breakdown effects. Zener breakdown, also known as Zener knee effect, is a reversible process where the applied voltage across the diode surpasses its nominal reverse-bias breakdown voltage and allows current to flow in the reverse, or Zener, direction. This causes the diode to break down and become electrically unstable, thus forming a voltage regulator. The reverse voltage across the device is thus stabilized and clamped to the nominal breakdown voltage. On the other hand, avalanche breakdown is a non-reversible process where the reverse-biased voltage on the diode surpasses its avalanche voltage, causing large amounts of current to flow in the reverse direction, due to the high internal electric fields. This process makes the diode to be destroyed.
The 1N4109UR-1 diode exhibits Zener breakdown effect in a maximum of 50 volts, which makes it suitable for applications requiring a low drop-out voltage, such as in signal processing, signal buffering, and voltage regulation. It is packaged in a glass, surface-mount package with a hermetically sealed body, which provides excellent thermal performance, along with excellent electrical characteristics.
In terms of its operation, the 1N4109UR-1 diode works by Zener breakdown, where the voltage across the diode is clamped to the reverse-bias breakdown voltage, allowing current to flow in the reverse direction. It also has an avalanche breakdown voltage of 200V, but it can withstand up to +50 Volt reverse-bias voltage. The device is available in five different packages: a flat, glass package, a leaded package, a surface-mount package, a mini flat-pack package, and a wave-braided package. The device also features a built-in diode circuit, which helps to reduce the output noise of high-frequency applications.
Additionally, It has an additional feature of its gate voltage suppression ability, which helps protect the device from static electricity. It also comes with a built-in temperature compensation circuit, which helps to ensure a stable output voltage over wide temperature ranges. The 1N4109UR-1 diode is ideal for applications such as signal buffering, video driver circuits, low-dropout voltage regulators, automotive, industrial and consumer electronics.
In conclusion, the 1N4109UR-1 diode is a Zener diode that has been developed for low noise reference voltage supply to the signal paths. It utilizes Zener breakdown, which clamps the reverse-bias voltage to the breakdown voltage, and avalanche breakdown, which allows current to flow in the reverse direction. It also has features such as a built-in diode circuit, gate voltage suppression and temperature compensation. The device is packaged in five different packages and is suitable for applications such as signal buffering, voltage regulation, automotive, industrial and consumer electronics.
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