1N4151W-G3-08 Allicdata Electronics
Allicdata Part #:

1N4151W-G3-08-ND

Manufacturer Part#:

1N4151W-G3-08

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 50V 150MA SOD123
More Detail: Diode Standard 50V 150mA Surface Mount SOD-123
DataSheet: 1N4151W-G3-08 datasheet1N4151W-G3-08 Datasheet/PDF
Quantity: 1000
15000 +: $ 0.02553
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Small Signal =
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are semiconductor devices that allow electric current to flow in one direction only and are used for rectifying electrical energy to recharge and store batteries, produce DC voltage, and regulate AC power. The 1N4151W-G3-08 is a high-speed general-purpose silicon rectifier diode suitable for use in high-reliability fast switching, low-noise, and high-speed applications. This diode is designed to be used in high-frequency switching devices such as free-wheeling diodes and rectifiers in switched-mode power supplies. This diode can also be used in voltage multiplier circuits, signal rectification, protection circuits, and countless other applications.

Characteristics

The 1N4151W-G3-08 has a reverse voltage of 75V, a peak forward surge current of 300mA, and a maximum forward current of 200mA. It also has a maximum forward voltage drop of 0.5V at 200mA, a maximum reverse current of 10uA at 75V, and an operating temperature range of -40°C to +175°C. This diode has an excellent forward voltage drop profile, low junction capacitance, and high speed.

Working Principle

The 1N4151W-G3-08 operates on the principle of PN junction diode. It is constructed by joining two different types of semiconductor materials – p-type material and n-type material. When a positive voltage is applied to the anode of the diode and a negative voltage is applied to the cathode, the PN junction creates an electric field which allows the current to flow through the diode in a single direction, from the anode to the cathode.

Application Field

The 1N4151W-G3-08 is suitable for a variety of applications including:

  • Switched-mode power supplies
  • AC voltage regulator
  • Radio frequency circuits
  • Battery recharging circuits
  • On/off switching of switching circuits
  • Signal rectification
  • Voltage multipliers
  • Protection circuits

In addition, the diode can also be used in automotive, industrial and medical electronics, LED lighting, and various other applications.

Advantages

The 1N4151W-G3-08 has a variety of advantages, including:

  • High reverse voltage rating
  • High forward surge current
  • Excellent forward voltage drop profile
  • Low junction capacitance
  • High speed
  • Low reverse current
  • Low forward voltage drop

These features make the 1N4151W-G3-08 well suited for many applications. It is a reliable and efficient diode that can provide superior performance and excellent protection against a variety of electrical hazards.

The specific data is subject to PDF, and the above content is for reference

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