Allicdata Part #: | 1N4148_S62Z-ND |
Manufacturer Part#: |
1N4148_S62Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 100V 200MA DO35 |
More Detail: | Diode Standard 100V 200mA Through Hole DO-35 |
DataSheet: | 1N4148_S62Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 10mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 5µA @ 75V |
Capacitance @ Vr, F: | 4pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | -55°C ~ 175°C |
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1N4148_S62Z is a single-phased, low-forward blocking and low-temperature rising silicon controlled rectifier (SCR) diode. It is widely used in rectifiers, inverters, converters and other power control systems. As for its application field, 1N4148_S62Z has applications in the fields of telecommunication, aviation, automobile, motor and motor control.
1N4148_S62Z is also known as Schottky Barrier Diode. It consists of an N-type semiconductor and a P-type semiconductor that are connected together to form a conducting bridge. There is a voltage applied across the bridge, and the N-type semiconductor is negatively charged, while the P-type semiconductor is positively charged. When the voltage is high enough, the electrical current will flow through the diode, allowing it to be used in rectifier circuits.
The working principle of 1N4148_S62Z is that it functions as a switch. When the voltage is low, it acts as a insulator and blocks the flow of electrical current, but when the voltage is high enough, it switches on and allows current to flow through it. This is why it is often used in rectifier circuits, as it can allow for the rectification of AC voltage signals into DC voltage signals.
When it comes to its operating temperature, the 1N4148_S62Z diodes can operate up to 85°C. It also has a low reverse leakage current, making it suitable for a variety of applications, such as switching power supplies, DC motors, and other power control systems. Furthermore, its high forward current and low forward voltage drop make it ideal for use in high-current circuits.
Overall, the 1N4148_S62Z diode is a high-performance, efficient and versatile diode that can be used in many applications. It is easy to use, and its low temperature rise and low forward voltage drop make it an ideal choice for rectifier, inverter and converter circuits. Its applications include telecommunications, aviation, automobiles, motors and motor control systems, and its low reverse leakage current and high forward current make it suitable for many power control systems.
The specific data is subject to PDF, and the above content is for reference
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1N4104 TR | Central Semi... | 0.13 $ | 20000 | DIODE ZENER 10V 250MW DO3... |
1N4148-T26A | ON Semicondu... | 0.01 $ | 65000 | DIODE GEN PURP 100V 200MA... |
1N4150-1 | Microsemi Co... | -- | 488 | DIODE GEN PURP 50V 200MA ... |
1N4153-1 | Microsemi Co... | 1.51 $ | 286 | DIODE GEN PURP 50V 150MA ... |
1N4150UR-1 | Microsemi Co... | -- | 324 | DIODE GEN PURP 50V 200MA ... |
CPD83V-1N4148-CT20 | Central Semi... | 105.51 $ | 7 | DIODE GP 100V 200MA DIE 1... |
1N4148WS-G RVG | Taiwan Semic... | 0.02 $ | 3000 | DIODE GEN PURP 75V 150MA ... |
1N4149TR | ON Semicondu... | 0.01 $ | 1000 | DIODE GEN PURP 100V 500MA... |
1N4148WS-HE3-08 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 75V 150MA ... |
1N4148W-G3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 75V 150MA ... |
1N4151TAP | Vishay Semic... | 0.01 $ | 40000 | DIODE GEN PURP 50V 150MA ... |
1N4154TAP | Vishay Semic... | 0.01 $ | 40000 | DIODE GEN PURP 25V 150MA ... |
1N4154TR | Vishay Semic... | 0.01 $ | 40000 | DIODE GEN PURP 25V 150MA ... |
1N4148-P-TAP | Vishay Semic... | 0.01 $ | 40000 | DIODE GEN PURP 75V 2A DO3... |
1N4150TAP | Vishay Semic... | 0.02 $ | 40000 | DIODE GEN PURP 50V 150MA ... |
1N4148WS RRG | Taiwan Semic... | -- | 96000 | DIODE GEN PURP 75V 150MA ... |
1N4150W-E3-18 | Vishay Semic... | 0.02 $ | 10000 | DIODE GEN PURP 50V 200MA ... |
1N4151WS-E3-08 | Vishay Semic... | 0.03 $ | 12000 | DIODE GEN PURP 50V 150MA ... |
1N4148 A0G | Taiwan Semic... | 0.01 $ | 55000 | DIODE GEN PURP 100V 150MA... |
1N4148-T50R | ON Semicondu... | 0.01 $ | 40000 | DIODE GEN PURP 100V 200MA... |
1N4148TA | ON Semicondu... | -- | 210000 | DIODE GEN PURP 100V 200MA... |
1N4148-TP | Micro Commer... | 0.01 $ | 230000 | DIODE GEN PURP 75V 150MA ... |
1N4148-TAP | Vishay Semic... | -- | 120000 | DIODE GEN PURP 75V 300MA ... |
1N4148WL2-TP | Micro Commer... | -- | 70000 | DIODE GP 100V 150MA DFN10... |
1N4151TR | Vishay Semic... | -- | 30000 | DIODE GEN PURP 75V 150MA ... |
1N4148-P-TR | Vishay Semic... | 0.01 $ | 30000 | DIODE GEN PURP 75V 2A DO3... |
1N4148WSTR | SMC Diode So... | 0.01 $ | 213000 | DIODE GEN PURP 75V 300MA ... |
1N4148WTR | SMC Diode So... | 0.01 $ | 171000 | DIODE GEN PURP 75V 250MA ... |
1N4150TR | Vishay Semic... | 0.02 $ | 40000 | DIODE GEN PURP 50V 300MA ... |
1N4148W-G RHG | Taiwan Semic... | 0.02 $ | 102000 | DIODE GEN PURP 100V 150MA... |
1N4148W RHG | Taiwan Semic... | -- | 60000 | DIODE GEN PURP 100V 150MA... |
1N4148WSF-7 | Diodes Incor... | -- | 15000 | DIODE GEN PURP 100V 250MA... |
1N4148WQ-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 100V 300MA... |
1N4150W-E3-08 | Vishay Semic... | 0.04 $ | 24000 | DIODE GEN PURP 50V 200MA ... |
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