Allicdata Part #: | 1N4151W-E3-18-ND |
Manufacturer Part#: |
1N4151W-E3-18 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 150MA SOD123 |
More Detail: | Diode Standard 50V 150mA Surface Mount SOD-123 |
DataSheet: | 1N4151W-E3-18 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02137 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 150mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 50mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 50nA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A 1N4151W-E3-18 is a single-phase silicon rectifier diode that is used primarily to provide electrical signal rectification in a wide variety of electronic devices. It is a diodes-type device fabricated using silicon wafers and housed in an 18mm long axial-leaded case. The device features low forward voltage drop and fast reverse recovery, making it suitable for high speed switching operations.
One of the primary application fields for 1N4151W-E3-18 diodes is in linear power supply circuits. Such power supplies rely on the surge pass capability of the rectifier diode to route power waves to the downstream load without significant alteration in their voltage characteristics. Depending on the circuit requirements, such diodes may be configured in bridge or half-bridge rectifier configurations.
In addition to its use in linear power supplies, the 1N4151W-E3-18 can be employed as a free-wheeling diode in phase-controlled rectifier circuits. Such phase-controlled rectifier circuits are usually used for the AC-DC conversion when the rectified voltage needs to be closely regulated. The free-wheeling diode prevents damaging resonance from occurring between the SCR and the coil.
The working principle of the 1N4151W-E3-18 is based on the same physical phenomenon as any other diode rectifier. When the forward-bias voltage is applied to the diode, the diode acts as a low impedance continuously conducting path, allowing current to flow smoothly in the forward direction. When the applied reverse-bias voltage is greater than the sum of the peak inverse voltage (PIV) and the reverse saturation current (IRS) of the diode, the diode blocks current in the reverse direction. This dynamic rectifying behavior is utilized in electronic devices to convert alternating current into direct current.
In conclusion, the 1N4151W-E3-18 diode is a single-phase silicon rectifier diode with low forward voltage drop and fast reverse recovery, making it suitable for high speed switching applications. It is used primarily in linear power supply circuits and phase-controlled rectifier circuits, and its working principle is based on the rectifying behavior of the PN junction, which allows current to flow in one direction and blocks current in the other direction.
The specific data is subject to PDF, and the above content is for reference
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