Allicdata Part #: | 1N4154_T50R-ND |
Manufacturer Part#: |
1N4154_T50R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 35V 100MA DO35 |
More Detail: | Diode Standard 35V 100mA Through Hole DO-35 |
DataSheet: | 1N4154_T50R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 35V |
Current - Average Rectified (Io): | 100mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 30mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 100nA @ 25V |
Capacitance @ Vr, F: | 4pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | 175°C (Max) |
Base Part Number: | 1N4154 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1N4154_T50R is a medium-speed type of single, glass-passivated, silicon Junction Rectifier diode. It was manufactured by Lite-On Inc. and is used in many high-voltage, low-power AC-DC and DC-DC fast-switching applications. Designed for high frequency, the 1N4154_T50R diode can have up to sixty mA of recovery current, and can withstand peak inverse voltage of up to seventy volts.
The 1N4154_T50R’s main feature is its low forward voltage drop, which is primarily possible thanks to its tiny surface area, which makes it suitable for applications where power efficiency must be kept to a maximum. As a result, the 1N4154_T50R diode can be used in a wide range of applications, such as solar energy harvesting, high-voltage regulated DC-DC converters, switching regulator circuits, and SMPS systems. In addition, it is also suitable for use in power line communications, optical transceivers, EMI/RFI filtering, and other applications that require high voltage and low power, as well as high efficiency.
The working principle of the 1N4154_T50R diode is straightforward. When a forward current is applied, the diode conducts and allows current to flow. The direction of current flow is determined by the diode’s polarity. When a reverse current is applied, the diode blocks the current from flowing, and acts as an open switch.
The major advantage of the 1N4154_T50R is that it has excellent thermal characteristics. Its high temperature coefficient, low leakage current and low forward voltage drop make it an ideal diode for fast-switching applications. It also has high reliability, which makes it more suitable for long-term applications. Furthermore, its tiny size is perfect for applications that call for small components.
Lastly, the 1N4154_T50R provides users with excellent performance and durability. With a surge capability of up to sixty mA and a dielectric strength of seventy volts, the diode acts as a reliable barrier in many applications. It is damp-proof, UV resistant, and vibration resistant, making it highly reliable and suitable for applications that require a high degree of protection.
In conclusion, the 1N4154_T50R diode is a highly versatile and reliable device that is suitable for a wide range of applications, including solar energy harvesting, high-voltage regulated DC-DC converters, switching regulator circuits, SMPS systems, and more. Its small size, high thermal characteristics and excellent performance make it the perfect choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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