1N4732AE3/TR13 Allicdata Electronics
Allicdata Part #:

1N4732AE3/TR13-ND

Manufacturer Part#:

1N4732AE3/TR13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 4.7V 1W DO204AL
More Detail: Zener Diode 4.7V 1W ±5% Through Hole DO-204AL (DO-...
DataSheet: 1N4732AE3/TR13 datasheet1N4732AE3/TR13 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 1N4732
Description

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The 1N4732AE3/TR13 is a single zener diode that comes in an SOT-23 package with a breakdown voltage of 5.6V at 7mA. It is used for protection, regulation, clamping and reference applications. It includes a Zener diode, which is a heavily doped diode with its p-n junction reversed-biased. The Zener action occurs when the voltage across the diode exceeds the reverse breakdown voltage. The resulting current across the junction creates a voltage drop proportional to the current, called the Zener voltage.

In order to understand the working principle of the 1N4732AE3/TR13, we must first understand the behavior of a reverse-biased Zener diode. The Zener diode consists of a heavily doped p-n junction. When the diode is reversed biased, the potential difference between the anode and cathode must be greater than the Zener voltage, which is the point at which the diode “breaksdown” and conducts. This breakdown can occur due to the electric field or “avalanche” effect.

The breakdown voltage of a Zener diode is specifically determined by the doping concentrations of the n- and p-type regions. The higher the doping concentrations, the lower the breakdown voltage. The 1N4732AE3/TR13 has a breakdown voltage of 5.6V. In addition, the Zener diode exhibits a certain amount of reverse resistance, called the Zener impedance, in contrast to the junction capacitor and the resulting dynamic conductance. As the applied voltage approaches the Zener voltage, the capacitance of the diode junction becomes more significant and the Zener impedance decreases.

The 1N4732AE3/TR13 can also be used as a voltage regulator or clamping diode. If a voltage source has voltage swing above the breakdown voltage, a Zener diode such as the 1N4732AE3/TR13 can be used to clamp the voltage and limit it to the breakdown voltage. This is due to the nature of the breakdown of the diode at a specific voltage. The clamping action of the Zener diode is useful in applications such as in power supplies and voltage converters, where voltage regulation is needed.

Another application of the 1N4732AE3/TR13 is as a reference diode, where it is used in conjunction with other components to set a reference voltage. The Zener diode provides a stable voltage at a certain current level. This provides accuracy, repeatability and temperature compensation of the reference voltage. Because of this, the 1N4732AE3/TR13 is ideal for precision reference applications.

In summary, the 1N4732AE3/TR13 is a Zener diode in an SOT-23 package, with a breakdown voltage of 5.6V at 7mA. It has a variety of applications, including clamping and reference applications. Understanding the behavior of the Zener diode is essential in order to make the most of the 1N4732AE3/TR13\'s capabilities.

The specific data is subject to PDF, and the above content is for reference

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