Allicdata Part #: | 1N4737A-TPTR-ND |
Manufacturer Part#: |
1N4737A-TP |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE ZENER 7.5V 1W DO41G |
More Detail: | Zener Diode 7.5V 1W ±5% Through Hole DO-41G |
DataSheet: | 1N4737A-TP Datasheet/PDF |
Quantity: | 10000 |
5000 +: | $ 0.02381 |
10000 +: | $ 0.02024 |
25000 +: | $ 0.01905 |
50000 +: | $ 0.01786 |
125000 +: | $ 0.01588 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 7.5V |
Tolerance: | ±5% |
Power - Max: | 1W |
Impedance (Max) (Zzt): | 4 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 5V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41G |
Base Part Number: | 1N4737 |
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1N4737A-TP is a single Zener diode which is used for voltage regulation, surge absorption, and clamping. It provides a voltage reference in the circuit to limit the peak voltage level. The diode conducts in the forward-bias direction when the voltage is above the rated breakdown voltage. It is available in the DO-41 package with a rated voltage of 5.1 volts.
The 1N4737A-TP diode has two main operating regions: break-down region and Zener region. The break-down region is characterised by the diode conducting high currents when the voltage is greater than the diode\'s rated breakdown voltage. The Zener region is characterised by the diode conducting low currents when the voltage is below the rated breakdown voltage. This helps to limit the peak voltage level in the circuit.
The 1N4737A-TP diode is designed to work with a variety of different applications. It is commonly used in voltage conversion applications such as voltage regulators, battery chargers, and power supplies. It is also used in voltage level-shifting circuits, voltage limiters, and oscillators. The diode is also used in surge protection circuits, RF circuits, and audio circuits.
The working principle of the 1N4737A-TP diode is based on the PN junction. This type of junction is formed when two differently doped materials are brought together in a semiconductor material. When a bias voltage is applied to the junction, a depletion layer forms. This layer is made up of an accumulated charge which acts like an insulating barrier and prevents further current flow. This is the basis of the diode\'s operation.
The diode is highly efficient, with a high reverse breakdown voltage, fast circuit response, and low reverse current. It is also capable of suppressing transient surges up to 8kV. The diode is able to withstand high temperatures and can operate up to 150°C. It is RoHS compliant and has a maximum power dissipation of 500mW.
In summary, the 1N4737A-TP diode is a single Zener diode used for voltage regulation and surge absorption. It is based on the PN junction and provides a voltage reference to limit the peak voltage levels in a circuit. It is highly efficient and can withstand temperatures up to 150°C. The 1N4737A-TP is used for a variety of applications such as converters, battery chargers, level-shifting circuits, and surge protection.
The specific data is subject to PDF, and the above content is for reference
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