1N4740CPE3/TR12

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	10V
Tolerance:	±2%
Power - Max:	1W
Impedance (Max) (Zzt):	7 Ohms
Current - Reverse Leakage @ Vr:	10µA @ 7.6V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	1N4740

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Introduction to 1N4740CPE3/TR12

The 1N4740CPE3/TR12 is a single Zener diode specially designed for use in voltage regulation, voltage clamping, and other circuit applications in which a positive voltage conductance is required. This diode has a wide range of uses due to its low voltage and power ratings, making it suitable for applications where a higher voltage and power capacity is not needed. The advantages of the 1N4740CPE3/TR12 Zener diode compared to other comparable devices include an extremely low leakage current, high thermal stability, and an extremely wide dynamic range.Application Fields of 1N4740CPE3/TR12

The 1N4740CPE3/TR12 Zener diode is typically used in voltage regulation applications, which involve the regulation of voltage levels between two or more stages in a circuit. This diode is often found in power supplies, voltage regulators, and low-noise equipment. It can also be used in applications such as overvoltage protection, voltage switching, and even in space environments, where reliable and robust regulation is required. Additionally, this diode can be used to prevent overvoltage transients and high voltage transients, both of which can cause catastrophic damage to a circuit.Working Principle of 1N4740CPE3/TR12

The working principle behind this Zener diode is based on its ability to detect a voltage level and cause the application of that voltage to rise or fall to the desired level. This diode’s ability to sense and react to a voltage level depends upon its design. For the 1N4740CPE3/TR12 diode, the voltage regulation force is driven by the presence of a small amount of P-type impurity in the N-type semiconductor material.The P-type impurity in the circuit causes a difference in electron concentrations between the two extremities of the diode, called the avalanche and Zener regions. When the applied voltage reaches a certain level, the electrons in the avalanche region are forced to move to the Zener region, allowing the voltage present to be distributed across the two regions according to its resistance. This causes the voltage level to remain the same until it is changed by the application of a different voltage.The P-type impurity also allows the diode to dissipate energy in the form of heat, light, and voltage. This is known as the breakdown voltage, which is the voltage at which the diode ceases to be a viable power source. In the case of the 1N4740CPE3/TR12 Zener diode, the breakdown voltage is typically between 2V to 10V, allowing it to remain an efficient power source even under demanding conditions.Conclusion

The 1N4740CPE3/TR12 Zener diode is an efficient and reliable device capable of providing voltage regulation solutions in a variety of applications. Due to its low power and voltage ratings, the 1N4740CPE3/TR12 is often found in devices requiring a low voltage and power capacity. Additionally, this diode’s ability to dissipate energy in the form of heat, light, and voltage makes it suitable for various electrical applications, such as overvoltage protection, voltage switching, and even space environments. The 1N4740CPE3/TR12 also has a wide range of use due to its thermal stability, low leakage current, and dynamic range.

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