1N4746P/TR8

Diodes - Zener - Single

The 1N4746P/TR8 is a single Zener diode. A traditional Zener diode is a heavily doped semiconductor diode, which undergoes quantum-mechanical breakdown at certain voltages, allowing the current to flow through the diode in reverse bias. This reverse breakdown voltage is very stable and is directly proportional to the amount of doping on the implementation device. The 1N4746P/TR8 is a silicon avalanche breakdown diode which employs a low-current reverse breakdown voltage of 8V. For the diode to properly function, the reverse breakdown voltage operating junction temperature must be taken into account.

Application Field

The 1N4746P/TR8 zener diode has a variety of applications, including:

• Clamping
• Voltage regulation
• Static charge protection
• Reverse bias supply
• Surge absorption
• Peak current control
• Voltage referencing
• AC/DC signal separation

Additionally, the 1N4746P/TR8 can also be used in in electrical circuits as a voltage reference, for circuit protection, and for providing a consistent input current across a range of voltages.

Working Principle

The 1N4746P/TR8 is a single Zener diode, which works using a reverse breakdown voltage. The reverse breakdown voltage is the amount of voltage necessary to cause a current to flow through a diode in reverse bias. Under certain conditions, electrons in a diode will tunnel across the junction between n-type and p-type semiconductor materials and collect in the p-type material, thus allowing a current to flow through the junction. The reverse breakdown voltage of the 1N4746P/TR8 is 8V. When the reverse breakdown voltage is reached, the current starts to flow in the reverse biased direction.

Once the current starts to flow, it continues to flow until the voltage is increased to a level where it exceeds the breakdown voltage. At this point, the current will be stopped and the diode will return to its original state. The 1N4746P/TR8 can be used for various applications, including clamping, voltage regulation, static charge protection, reverse bias supply, surge absorption, peak current control, voltage referencing, and AC/DC signal separation.

The 1N4746P/TR8 has a low-current reverse breakdown voltage, which is beneficial for various applications due to its ability to withstand higher currents without overloading the circuit or itself. In addition to being used in electrical circuits, the 1N4746P/TR8 can be used as a voltage-clamping device, meaning that it will clamp the voltage at the specified breakdown voltage and eliminate the risk of overvoltage. The 1N4746P/TR8 can also be used as a static charge protection device, preventing surges of current from causing any damage to the circuit.

In conclusion, the 1N4746P/TR8 is a single Zener diode with a low-current reverse bias voltage of 8V, which is used in a variety of different applications, such as clamping, voltage regulation, static charge protection, reverse bias supply, surge absorption, peak current control, and voltage referencing. In addition to its various applications, the 1N4746P/TR8 can also be used as a static charge protection device and a voltage reference device, providing a consistent input current across a range of voltages.