1N4747A-T Allicdata Electronics
Allicdata Part #:

1N4747ADITR-ND

Manufacturer Part#:

1N4747A-T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER 20V 1W DO41
More Detail: Zener Diode 20V 1W ±5% Through Hole DO-41
DataSheet: 1N4747A-T datasheet1N4747A-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 20V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 22 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 15.2V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Base Part Number: 1N4747
Description

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1N4747A-T is a single Zener diode that belongs to the Diodes family. It is mainly used for voltage regulation and clamping or for generating low power output. This diode has a voltage regulation range from 3.0 to 200 volts and is designed to handle power up to 500 mW.

1N4747A-T comes in a package TO-92, is made of glass and has an epoxy that protect the device from outside environment. The maximum reverse leakage of this device is 35 µA at 25°C with a 0.2 VDC applied. The maximum forward voltage drop is 0.7 V at 30 mA and its power dissipation is 500 mW which should not be exceeded.

This single Zener diode device is capable of withstanding surge current of up to 10A, making it an ideal choice for voltage regulation under extreme conditions. Its junction temperature should not exceed 125°C in order to obtain the required characteristics. Due to its high quality build, 1N4747A-T exhibits very low junction capacitance, typically 25 pF.

The operating temperature of 1N4747A-T is from -65°C to+175°C and is suitable for both commercial and industrial applications. This device can be used in product designs for voltage regulation, current sensing and self-protection from overvoltage. It can also be employed for generating low power outputs or for controlling the gates in gate drive applications.

The working principle of the 1N4747A-T is fairly simple. When bias is applied to the anode and cathode, a reverse breakdown voltage is achieved. This voltage is typically fixed in a Zener diode, while the current flows through the diode, thus regulating the output voltage. The zener operation occurs when the device is reverse biased, meaning that the anode is more than the cathode. When this happens, voltage is forced across the junction of the diode, which then induces a current flow that is equal to the reverse bias current.

In conclusion, the 1N4747A-T is an ideal choice for voltage regulation, and current sensing projects, as it provides excellent protection against contaminants and has a wide-range regulation. It is easy to use and can be used in various applications. This device is very reliable, with a wide-range voltage and low junction capacitance, making it an ideal choice for any voltage regulation project.

The specific data is subject to PDF, and the above content is for reference

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