Allicdata Part #: | 1N4747GR0G-ND |
Manufacturer Part#: |
1N4747G R0G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 20V 1W DO204AL |
More Detail: | Zener Diode 20V 1W ±5% Through Hole DO-204AL (DO-4... |
DataSheet: | 1N4747G R0G Datasheet/PDF |
Quantity: | 1000 |
20000 +: | $ 0.02856 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 20V |
Tolerance: | ±5% |
Power - Max: | 1W |
Impedance (Max) (Zzt): | 22 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 15.2V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
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Introduction
1N4747G R0G is a single Zener diode, meaning it is a semiconductor device that conducts electricity in one direction but not in the opposite direction. It is used to regulate voltage to prevent electrical overload. As a part of the 1N47xx series, it consists of a cathode and an anode along with a reverse junction.
Application Field of 1N4747G R0G
Being a single Zener diode, the 1N4747G R0G is used in applications where a current limiting diode is needed. These include voltage regulation and overvoltage protection. It is ideal for industrial, automotive, and general purpose applications due to its high-power rating.
The 1N4747G R0G can also be used as a controlling device in a circuit, because of its ability to limit the current passing through the reverse-biased junction. Additionally, it can be used for pulse width modulation (PWM) circuit applications.
Working Principle of 1N4747G R0G
The 1N4747G R0G works by allowing current to flow in one direction while limiting the current in the reverse direction. It contains two terminals, the cathode and the anode, and a reverse junction. When the diode is forward biased, it allows current to flow by creating an electric field through the junction. In reverse bias, however, the electric field created is in the opposite direction, which is why it limits the current.
It is important to note that the reverse voltage threshold of the 1N4747G R0G is set by its Zener breakdown voltage. This is the voltage at which the current flowing through the diode begins to increase exponentially. It is therefore important to select a diode with a breakdown voltage suitable for the application.
Selection of 1N4747G R0G
When selecting the 1N4747G R0G, it is important to consider several factors, including the breakdown voltage and the power rating of the diode. The power rating is determined by the amount of power that can be dissipated by the device without causing damage, while the breakdown voltage is the voltage at which the device starts to conduct electricity.
It is also important to consider the current rating, temperature coefficient, and dynamic resistance of the device when selecting the 1N4747G R0G. The current ratings vary depending on the type and size of Zener diode, while the dynamic resistance and temperature coefficient of the device determine how much current can be deregulated at different temperatures.
Conclusion
1N4747G R0G is a single Zener diode that can be used in applications where current limiting diodes are needed, such as in voltage regulation and overvoltage protection. The working principle of the 1N4747G R0G involves an electric field created through the junction when the diode is forward biased, and a reverse electric field which limits the current when the diode is in reverse bias. When selecting the device, it is important to consider its power rating, breakdown voltage, current rating, temperature coefficient, and dynamic resistance.
The specific data is subject to PDF, and the above content is for reference
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