1N4755A-T

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Voltage - Zener (Nom) (Vz):	43V
Tolerance:	±5%
Power - Max:	1W
Impedance (Max) (Zzt):	70 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 32.7V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-41
Base Part Number:	1N4755

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Introduction to 1N4755A-T

1N4755A-T is a single diode widely used in various types of electronics and electrical applications. It is designed for an optimal performance in applications where high-current stability and reliable operation are paramount. 1N4755A-T is a Zener diode, which essentially operates as a reverse-biased PN junction. This type of diode is ideal for operating at high voltage and current levels, offering a relatively stiff breakdown voltage with a low thermal coefficient.

Application of 1N4755A-T

1N4755A-T finds a variety of applications in various types of electronics. In the industrial industry, 1N4755A-T diodes are used in industrial applicators and air-conditioning systems for efficient switching of loads. It is also used in the automotive sector for its stable performance in voltage-sensitive circuits. It is also used in the medical sector to deliver medical treatment solutions either through electrical stimulation or electrotherapy.1N4755A-T diodes are also used in the military sector to provide sensitive and reliable switching of electrical signals in radios and navigation systems. They are used in consumer electronics such as televisions, DVD players, and game consoles, as well as in consumer appliances such as computers, laptops, and game consoles.

Working Principle of 1N4755A-T

The working principle of 1N4755A-T relies on the problem of electric field breakdown. When reverse bias is applied to the junction, the electrons and holes are rendered immobile, resulting in a reduced current flow. As the voltage across the junction increases, the electric field gradually intensifies, which eventually leads to the breakdown of electron-hole pairs. This is known as the avalanche breakdown and results in a drastic increase in current flow.The breakdown voltage of 1N4755A-T is dependent on the doping concentration of the semiconductor materials used. The doping concentration of the materials determines the width of the depletion region. This region increases as the doping concentration increases, allowing the diode to operate at higher breakdown voltages.

Advantages of 1N4755A-T

1N4755A-T is an extremely reliable and efficient diode. It offers a wide operating range, allowing it to be used in a variety of applications. 1N4755A-T is a low-power, cost-effective solution for devices requiring stable voltage levels and reliable operation. It is also relatively insensitive to humidity, making it a suitable choice for industrial and automotive applications.The low thermal coefficient of 1N4755A-T makes it ideal for use in high-temperature environments. It features a wide switching speed range, allowing it to be used in both low- and high-frequency applications. In addition, it also has excellent noise suppression characteristics, making it ideal for use in sensitive electronic circuits where noise levels must be minimized.

Conclusion

There is no doubt that 1N4755A-T is an extremely versatile, reliable and efficient diode. It offers a wide range of application possibilities, making it suitable for use in a variety of industries, from automotive and industrial to consumer electronics and medical applications. Its low thermal coefficient, wide switching speed range and excellent noise suppression characteristics make it a cost-effective solution for applications requiring reliable voltage and current stability.

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