Allicdata Part #: | 1N5222C-TR-ND |
Manufacturer Part#: |
1N5222C-TR |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 2.5V 500MW DO35 |
More Detail: | Zener Diode 2.5V 500mW ±2% Through Hole DO-35 |
DataSheet: | 1N5222C-TR Datasheet/PDF |
Quantity: | 1000 |
30000 +: | $ 0.02328 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 2.5V |
Tolerance: | ±2% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 30 Ohms |
Current - Reverse Leakage @ Vr: | 100µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
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1N5222C-TR Application Field and Working Principle
The 1N5222C-TR is a silicon Zener diode from the Diodes Incorporated family. It is rated at 5.1/5.8 volts and 2.4 watts, but also comes in alternative voltages of 3.1/3.5, 3.5/4.0, 6.8/7.5, 14.5/20 and 27/26.8 volts. This diode has a maximum clamped power dissipation of 2.4 watts and is commonly used for voltage regulation, protection and signal/sampling clamping applications.
The 1N5222C-TR is designed to provide a fixed voltage reference. This is accomplished by the controlled breakdown of the reverse-biased junction. The voltage is typically regulated at a Zener voltage, which is set by the structure of the junction. This regulation allows the device to provide a stable reference in applications where the load or power needs to be accurately maintained. Additionally, because of the Zener effect, the device can provide line protection and noise filtering, which makes it attractive for signal and sampling applications.
The 1N5222C-TR can be used in a variety of applications. These may include, for example, DC/DC and LED lighting converters, automotive engine control and monitoring systems, signal rectification, noise and transient suppression, and switching regulators. In addition, the device is often used as a voltage reference in a wide range of DC/DC and AC/DC power supply applications.
The 1N5222C-TR’s working principle is based on the Zener effect, which occurs when a heavily doped PN junction is reverse-biased. This generates an electric field within the junction that exerts a force on electrons in the junction region. As the voltage is increased, at a constant temperature, the electric field strength gets greater and eventually exceeds the ability of electrons to pass through the junction. This creates a region of high electric field (the avalanche region) and the current through the junction becomes limited. This limiting of current is called the Zener breakdown and is the basis of the device’s voltage regulation.
To determine the Zener voltage, the Zener breakdown needs to be lightly loaded. In practical applications, this means the Zener diode must be connected in parallel with a current limiting resistor. This limits the amount of current through the Zener diode and sets the Zener breakdown voltage. The resistor value is chosen such that the diode conducts approximately its rated power as the Zener current.
In summary, the 1N5222C-TR from Diodes Incorporated is a silicon Zener diode rated for 5.1/5.8 volts and 2.4 watts. It is commonly used for voltage regulation, protection, and signal/sampling clamping applications. Additionally, the device is capable of providing line protection, noise filtering, and voltage reference in a variety of DC/DC and AC/DC applications. The underlying principle of operation is based on the Zener effect.
The specific data is subject to PDF, and the above content is for reference
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