Allicdata Part #: | 1N5260B-T50ATB-ND |
Manufacturer Part#: |
1N5260B-T50A |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 43V 500MW DO35 |
More Detail: | Zener Diode 43V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N5260B-T50A Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.01370 |
10000 +: | $ 0.01191 |
25000 +: | $ 0.01072 |
50000 +: | $ 0.00953 |
125000 +: | $ 0.00794 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 43V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 93 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 33V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N5260 |
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The 1N5260B-T50A is a diode, more precisely a Zener diode, that is also known as a voltage regulator diode. It features a PN junction and works like a standard diode, but with a larger reverse breakdown voltage. For most applications requiring reverse voltage protection, the 1N5260B-T50A is the go-to choice.
Due to its versatile performance characteristics, the 1N5260B-T50A is used in a variety of applications, including circuit protection, power supplies, and voltage regulation. Its ability to regulate voltage and protect circuits make it particularly well-suited for use in rectifier circuits, power supplies, and other high-voltage applications.
The 1N5260B-T50A is a full package surface mount device with a power dissipation of 500 mW. It is designed with a maximum continuous Zener voltage of 5.6 volts, allowing for consistent regulation of power supplies and circuits above 6 volts. In addition, its low reverse leakage current reduces power losses, allowing it to work effectively even at higher temperatures.
The 1N5260B-T50A features a PN junction at its core, which is made up of two regions; the N-type and the P-type. These regions are separated by a thin depletion layer, which results in the diode’s conductivity. The biasing of the PN junction is what enables the diode to regulate voltage. When a positive voltage is applied to the anode, holes in the P-type are repelled, while electrons in the N-type are attracted. This, in turn, creates a large electric field within the depletion layer, which allows current to flow freely. This phenomenon is known as a forward bias.
To regulate voltage, a voltage greater than the breakdown voltage must be applied in the reverse direction, causing the depletion layer to become so thin that the electric field is too high for the electrons and holes to move. This causes the diode to be reverse-biased, preventing current from flowing and thus regulating the voltage. The 1N5260B-T50A is specifically designed to regulate voltages above 6 volts, meaning it can be used in any application where the voltage exceeds 6 volts.
In summary, the 1N5260B-T50A is a Zener diode designed for regulating voltages above 6 volts. Its combination of reverse breakdown voltage and low reverse leakage current make it ideal for use in high-voltage applications, such as rectifier circuits, power supplies, and circuit protection. The PN junction of the device and its forward and reverse bias allow it to effectively regulate voltages and protect circuits, making it a versatile and reliable choice for many electrical systems.
The specific data is subject to PDF, and the above content is for reference
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