1N5233BTR Discrete Semiconductor Products |
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Allicdata Part #: | 1N5233BFSTR-ND |
Manufacturer Part#: |
1N5233BTR |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 6V 500MW DO35 |
More Detail: | Zener Diode 6V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N5233BTR Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.01430 |
10000 +: | $ 0.01244 |
25000 +: | $ 0.01120 |
50000 +: | $ 0.00995 |
125000 +: | $ 0.00829 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 6V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 7 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 3.5V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N5233 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
1N5233BTR is a type of single Zener diode, with a wide application field and wide working principle. It is an ideal solution for providing reverse protection, while also allowing for a regulated DC output voltage.
1N5233BTR features a voltage regulation range of 5.1V to 200V, allowing it to be used with a variety of different devices. In addition, the diode exhibits very low dynamic impedance and very fast turn-on time, enabling it to respond to surge and transient voltages quickly and effectively. This makes it well suited to a range of applications where protection of connected components from high voltage may be required, such as power supply designs, CAN-bus networks, automobiles, electronics, and industrial plants.
1N5233BTRs are semiconductor devices consisting of two layers of the semiconductor material such as silicon and germanium. The two layers are termed PN or p-type and NN or n-type. The PN layer forms a junction, or barrier, and when a forward bias is applied, current will flow across the junction. Conversely, when a reverse bias is applied, the junction does not allow current to pass. The voltage at this junction is known as the Zener voltage, and is the main reason why 1N5233BTRs are useful for voltage regulation.
When a reverse current is applied, the electrons in the p-type and n-type layers recombine and form a depletion region, which acts as an insulator and prevents current from flowing. This is referred to as the Zener breakdown voltage, and is usually stated in the data sheet of a Zener diode. The current flowing through the diode under reverse bias is known as the Zener current, and is usually very small. Since 1N5233BTR has a wide breakdown voltage range, it can be used in many applications.
1N5233BTR is widely used in various applications, such as in power supplies, data systems, automotive electronics, and industrial plants. It is also commonly found in overvoltage protection circuit designs, where precision voltage regulation is required. Due to its high reverse voltage range, the diode is also often used in power supply designs, where it is connected in series with the regulator. Additionally, 1N5233BTR provides wide temperature range operation and very low leakage, making it suitable for use in low-power applications.
In conclusion, 1N5233BTR is an ideal diode for protecting components from high voltage surges, as well as providing precise voltage regulation. It is also well suited for providing reverse protection in power supplies and data systems. Furthermore, 1N5233BTR is manufactured with wide temperature range operation, and very low leakage, making it suitable for low-power applications.
The specific data is subject to PDF, and the above content is for reference
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