
Allicdata Part #: | 1N5234A-ND |
Manufacturer Part#: |
1N5234A |
Price: | $ 1.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 6.2V 500MW DO35 |
More Detail: | Zener Diode 6.2V 500mW ±10% Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 1000 |
455 +: | $ 1.34615 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 6.2V |
Tolerance: | ±10% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 7 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 3.8V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Description
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1N5234A application field and working principleDiodes - Zener - SingleThe 1N5234A is a three-terminal Zener diode suitable for a variety of surface-mounted applications. It is mainly used for applications where low-noise and low-power-consumption are important factors, especially in consumer electronics and portable equipment.The 1N5234A is constructed with isolation from the anode to the cathode with a Schottky barrier diode (SBD), which helps to minimize leakage current and noise. The device’s impedance is low and its breakdown voltage is consistent and stable, ensuring reliable performance in wide temperature range.The working principle of the 1N5234A is based on the Zener effect which occurs when voltage is applied to a reverse-biased semiconductor junction. When reverse-bias voltage exceeds the knee voltage of the device, the Zener effect appears and the breakdown voltage is reached. This phenomenon of localized electric field results in a small region of high current density within the depletion region of the junction. As a result, the current can flow in one direction (reverse) through the diode and the diode will begin to conduct.The breakdown voltage of the 1N5234A is typically 5.6V but varies according to the operating temperature. The device has a maximum temperature rise of 45°C and a maximum rated power dissipation of 500mW. It is designed to operate over a wide range of temperatures, from -55°C to 125°C, which makes it suitable for operations in extreme temperatures.The 1N5234A also has a maximum reverse current (Irrm) rating to complement its rated breakdown voltage. Irrm is the maximum current that flows through the diode when it is reverse-biased. This rating is important for ensuring that the diode does not suffer from excessive electric current which can cause further damage to the device. It also serves to limit the device’s reverse leakage current.The 1N5234A is a very versatile device, primarily because of its low-noise and low-power-consumption features as well as its wide temperature range. This makes it ideal for use in a variety of applications requiring switches, rectifiers, voltage references, voltage regulators, and protection against transient overvoltages. It is also suitable for distributed power systems and motor drives, as well as automotive and some military applications.In conclusion, the 1N5234A is a highly reliable device that can be used in a wide range of applications requiring noise-free, low-power performance. It has a rated breakdown voltage of 5.6V and a maximum reverse current rating of 15mA. In addition, it offers a wide operating temperature range of -55°C to 125°C and is suitable for use in distributed power systems, automotive, and some military applications.
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