1N5238BTR Allicdata Electronics
Allicdata Part #:

1N5238BTRFS-ND

Manufacturer Part#:

1N5238BTR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 8.7V 500MW DO35
More Detail: Zener Diode 8.7V 500mW ±5% Through Hole DO-35
DataSheet: 1N5238BTR datasheet1N5238BTR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 8.7V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 6.5V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Base Part Number: 1N5238
Description

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Diodes are semiconductors that allow only one-way current flow. Zener diodes are a special type of diode that allow current to flow in both directions, but only when it is above a certain reverse bias voltage. Zener diodes are specifically designed to provide reverse voltage protection and regulation. The 1N5238BTR is one such diode, designed for efficient linear regulation of low-power supplies.

The 1N5238BTR is a single junction zener diode, which is designed for low-voltage and low-power applications. It has a very low zener voltage of 1.24V and a power dissipation rating of 250mW. The 1N5238BTR is constructed with a PN junction of lightly doped semiconductor material to form an abrupt junction. This allows the diode to have a breakdown voltage of up to 6.2V while still offering low dynamic resistance.

The 1N5238BTR is typically used in regulator circuits in consumer electronics and other applications where low voltage and low power consumption is necessary. Its low voltage allows it to be used in low-power circuits, while its low dynamic resistance makes it ideal for applications that require precision regulation. It is also used to provide reverse-polarity protection, protect components from transients or voltage spikes, or suppress EMI or RF interference.

The working principle of the 1N5238BTR is based on the PN junction of its lightly doped semiconductor material. When a voltage is applied to the diode, the electric field of the junction creates a potential barrier. When the voltage across the junction reaches the zener voltage, the potential barrier is decreased and a current flows through the diode. The current is limited by the dynamic resistance of the diode, and the breakdown voltage is determined by the potential barrier of the PN junction.

The 1N5238BTR has a wide variety of useful features and applications, including providing low-voltage and low-power linear regulation, reverse voltage protection and suppression of EMI/RFI interference. Its low zener voltage, low power rating and low dynamic resistance make it ideal for precision circuits. The 1N5238BTR is a valuable component for many voltage regulation and protection applications.

The specific data is subject to PDF, and the above content is for reference

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