1N5239BTR Allicdata Electronics
Allicdata Part #:

1N5239BFSTR-ND

Manufacturer Part#:

1N5239BTR

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 9.1V 500MW DO35
More Detail: Zener Diode 9.1V 500mW ±5% Through Hole DO-35
DataSheet: 1N5239BTR datasheet1N5239BTR Datasheet/PDF
Quantity: 40000
5000 +: $ 0.01506
10000 +: $ 0.01310
25000 +: $ 0.01179
50000 +: $ 0.01048
125000 +: $ 0.00873
Stock 40000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 9.1V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 7V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Base Part Number: 1N5239
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 1N5239BTR is a zener diode, which refers to semiconductor devices that consist of one type of semiconductor material with a low voltage drop in connection with its reverse. It is mainly used in two-way protection, as well as DC to DC converters, and has an inherent resistance to heat and current. This particular type of diode also operates with a low voltage, making it suitable for use in low-power electronics.

In terms of its application fields, the 1N5239BTR is most commonly applied to isolate, maintain, and repair voltage, provide voltage references for power supplies, and provide circuit protection. The most common applications for the 1N5239BTR include load protection, reverse battery protection, and Zener diode protection from electrostatic discharge and overvoltage protection circuits.

Working principle wise, the 1N5239BTR diode is designed to create a negative voltage drop when exposed to current flow. It works by allowing current to flow in one direction, and not letting it flow back in the reverse direction. This is done by creating a region within the circuit that is electrically non-conductive. In other words, a certain amount of voltage and current is required in order for the diode to function.

When an input source is connected and powered, the 1N5239BTR diode works by setting up an electric potential across the junction of two semiconductors. Once the potential is reached, electrons from the P-type semiconductor are attracted to the N-type semiconductor, thus allowing the current to flow. On the other hand, if the potential is higher than the set potential, the electrons don’t flow, instead, the electric field begins to collapse, blocking current from the device.

As for its working characteristics, the 1N5239BTR diode has a forward voltage drop of only .45 volts and a reverse voltage of 5.1 volts. It also has a power dissipation of 500mW, maximum reverse current of 100nA, and maximum surge/avg forward current of 500mA/100mA respectively. An additional feature is that the 1N5239BTR can also be used to provide transient voltage protection, and it has a temperature coefficient of 0.6 volts/degree celsius.

In conclusion, the 1N5239BTR diode is a type of zener diode that can be used for various applications such as voltage references, reverse battery protection, electrostatic discharge protection, and circuit protection. It operates by creating a negative voltage drop when exposed to current, allowing current to flow in one direction, and blocking current from the device when its potential is higher than the set potential. It also has notable characteristics such as a forward voltage drop of .45 volts, reverse voltage of 5.1 volts, power dissipation of 500mW, and a temperature coefficient of 0.6 volts/degree celsius.

The specific data is subject to PDF, and the above content is for reference

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